RSFQ circuitry realized in a SINIS technology process

Khabipov, M.; Balashov, D; Buchholz, F.-I.; Kessel, W.; Niemeyer, J.

doi:10.1109/77.819338

Cited by 16 publications

(8 citation statements)

References 16 publications

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“…2001;Hagedorn et al, 2001Hagedorn et al, , 2002Kaul and van Duzer, 2001;Ohta et al, 2001;Schubert et al, 2001; van Duzer et al, 2002. 5 See Amin et al, 1992;Nevirkovets, 1995Nevirkovets, , 1997Capogna and Blamire, 1996;Nevirkovets et al, 1996Capogna et al, 1997;Maezawa and Shoji, 1997;Sugiyama et al, 1997Sugiyama et al, , 1999Balashov et al, 1998Balashov et al, , 1999Balashov et al, , 2001Schulze et al, 1998Behr et al, 1999;Buchholz and Kessel, 1999;Brinkman et al, 1999Brinkman et al, , 2001Khabipov et al, 1999Khabipov et al, , 2002aKhabipov et al, , 2002bKupriyanov et al, 1999;Buchholz et al, 2001;Cassel et al, 2001;Kohlmann et al, 2001Kohlmann et al, , 2002Nevirkovets, Ketterson, and Rowell, 2001;Nevirkovets, Ketterson, and Siegel, 2001;Shaternik et al, 2001;Kieler et al, 2002;Nevirkovets and Ketterson, 2002;Yamamori et al, 2002;Tolpygo, Brinkman, et al, 2003. between the S electrodes. Until now, only a planar geometry has been realized in experiments by…”

Section: B Basic Josephson Structuresmentioning

confidence: 99%

“…At TϾT c Ј Al is in the normal state, and I S () is close to sin if ␥ eff is large. At TϽT c Ј Al is in 10 See Maezawa and Shoji, 1997;Sugiyama et al, 1997Sugiyama et al, , 1999Balashov et al, 1998Balashov et al, , 1999Balashov et al, , 2001Schulze et al, 1998Behr et al, 1999;Buchholz and Kessel, 1999;Khabipov et al, 1999Khabipov et al, , 2002aKhabipov et al, , 2002bBuchholz et al, 2001;Cassel et al, 2001;Kohlmann et al, 2001Kohlmann et al, , 2002Kieler et al, 2002. FIG.…”

Section: E Measurement Of Barrier Transparency Asymmetry In Sinis Jumentioning

confidence: 99%

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The current-phase relation in Josephson junctions

Golubov

Kupriyanov

Il’ichev³

2004

Rev. Mod. Phys.

1,274

1,362

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This review provides a theoretical basis for understanding the current-phase relation (C⌽R) for the stationary (dc) Josephson effect in various types of superconducting junctions. The authors summarize recent theoretical developments with an emphasis on the fundamental physical mechanisms of the deviations of the C⌽R from the standard sinusoidal form. A new experimental tool for measuring the C⌽R is described and its practical applications are discussed. The method allows one to measure the electrical currents in Josephson junctions with a small coupling energy as compared to the thermal energy. A number of examples illustrate the importance of the C⌽R measurements for both fundamental physics and applications.

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Section: B Basic Josephson Structuresmentioning

confidence: 99%

Section: E Measurement Of Barrier Transparency Asymmetry In Sinis Jumentioning

confidence: 99%

The current-phase relation in Josephson junctions

Golubov

Kupriyanov

Il’ichev³

2004

Rev. Mod. Phys.

1,274

1,362

View full text Add to dashboard Cite

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“…The latter fact indicates that the true potential of this process has not yet been reached [20]. AlN tunnel barriers produced with this technique are promising candidates for utilization in double tunnel barrier junctions for digital applications, since a very high transmissivity and quality of the tunnel barriers are also required for this application [21], [22].…”

Section: Discussionmentioning

confidence: 99%

Analysis of the fabrication process of Nb/Al-AlN/sub x//Nb tunnel junctions with low R/sub n/A values for SIS mixers

Iosad

Kroug

Zijlstra

et al. 2003

IEEE Trans. Appl. Supercond.

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Abstract-We characterize the fabrication process of superconductor-insulator-superconductor junctions (SIS) based on a Nb/Al-AlN /Nb tri-layer. Utilization of the AlN tunnel barrier, produced by Al nitridation in a nitrogen glow discharge, enables us to produce high quality SIS junctions with low values (the product of junction resistance and area). Analyzing the correlation of junction resistance and plasma properties, it is concluded that the mechanism of tunnel barrier formation is based on nitrogen implantation into the Al layer with subsequent diffusion of nitrogen, stimulated by plasma heating. The latter process plays a dominant role since values are well correlated with the power dissipated on the substrate surface. An SIS mixer using this technology and electron-beam lithography has been successfully fabricated.

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“…Compatible with the well-established Nb-A1 technology [a], [3], the SINIS conception is also suitable for cryoelectronic applications requiring a high level of integration and a small parameter spread, e.g. voltage standards [4], [5] and rapid single flux quantum logic circuits [6].…”

Section: Introductionmentioning

confidence: 99%

Current-phase relation in Nb-Al based SINIS-type Josephson junctions

Götz

Khanin²,

Schulze³

et al. 2001

IEEE Trans. Appl. Supercond.

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Il'ichev, Hans Eclthardt Hocnig, arid Hans-Gcorg Meyer A6struct-The supercurrent-phase relation (CPR) of Nb-A1 based Josephson elements of superconductor/insulator/ normal conductor/insulator/superconductor-type is deduced from impedance measurements of the phase-biased junction. The chosen temperature range from 1.9 to 8.0 K covers the superconducting transition of the aluminum interlayer below which a pronounced non-harmonic CPR is found. At temperatures higher than the corresponding critical temperature, the CPR did not deviate significantly from purely harmonic shape. Both results are in agreement with theoretical predictions. K~: / U J O T~S -Cryogenic electronics, Josephson junctions, impedance measurement.

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RSFQ circuitry realized in a SINIS technology process

Cited by 16 publications

References 16 publications

The current-phase relation in Josephson junctions

The current-phase relation in Josephson junctions

Analysis of the fabrication process of Nb/Al-AlN/sub x//Nb tunnel junctions with low R/sub n/A values for SIS mixers

Current-phase relation in Nb-Al based SINIS-type Josephson junctions

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