Roughness of CdTe thin films grown on glass by hot wall epitaxy

Abstract

Cadmium telluride films were grown on glass substrates using the hot wall epitaxy (HWE) technique. The samples were polycrystalline with a preferential (111) orientation. Scanning electron micrographs reveal a grain size between 0.1 and 0.5 µm. The surface morphology of the samples was studied by measuring the roughness profile using a stylus profiler. The roughness as a function of growth time and scale size were investigated to determine the growth and roughness exponents, β and α, respectively. From the results we can conclude that the growth surface has a self-affine character with a roughness exponent α equal to 0.69 ± 0.03 and almost independent of growth time. The growth exponent β was equal to 0.38 ± 0.06. These values agree with that determined previously for CdTe(111) films grown on GaAs(100).

Faceted anomalous scaling in the epitaxial growth of semiconductor films

“…The crossover is probably on account of the initial surface roughness, which initially diminishes due to the occupancy of grooves and valleys. The temperature increase enhances the downward funnelling, reducing the crossover times and, consequently, the largest power-law interval was obtained for T = 300 • C. An additional evidence for our proposition is that this crossover was not observed in the CdTe deposition on pure glass substrates (a smaller initial roughness) at the same experimental conditions [15]. Therefore, the growth exponents in Ref.…”

“…• C. An additional evidence for our proposition is that this crossover was not observed in the CdTe deposition on pure glass substrates (a smaller initial roughness) p-2 at the same experimental conditions [15]. Therefore, the growth exponents in Ref.…”

“…Details of the growth system and sample preparation can be found elsewhere [9,15]. It is important to mention that the growth of some samples was repeated using the molecular beam epitaxy technique and they exhibited the same behaviour.…”

“…The samples used in the present work were produced by hot wall epitaxy at a growth rate of approximately 0.1 nm/s. Details of the growth system and sample preparation can be found elsewhere [9,15]. It is important to mention that the growth of some samples was repeated using the molecular beam epitaxy technique and they exhibited the same behaviour.…”

Synthesis of cadmium telluride epitaxial films on Al2O3 substrates and their electrophysical properties

“…Свойства тонких пленок CdTe зависят от метода их получения. Для синтеза тонких пленок CdTe используются различные технологические методы: метод физического вакуумного напыление [7,8], метод магнетронного распыления [9], метод горячей стенки [10], молекулярно-пучковая эпитаксия [11], металлоорганическое химическое осаждение из газовой фазы [12].…”