Roughness formation in (100) silicon during low‐energy Cs<sup>+</sup> bombardment

Мансилла, C.; Philipp, Patrick; Wirtz, Tom

doi:10.1002/sia.5054

Cited by 4 publications

(3 citation statements)

References 28 publications

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“…For each sample, the interface width at the organic/Si interface is smaller than the value of the Ag/organic interface. This is expected as the silicon wafers used for sample preparation have a small surface roughness close to 0.1 nm, , and interface broadening is either due to atomic mixing or roughness formation during the sputtering of the Ag and organic layers. For the Ag/organic interface, several comparisons can be made.…”

Section: Resultsmentioning

confidence: 96%

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry

Philipp¹,

Ngo²,

Shtein

et al. 2012

Anal. Chem.

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The performance of organic optoelectronic devices depends a lot on interface structure and width. Dynamic secondary ion mass spectrometry (SIMS) has been widely used to investigate interfaces in classical semiconductor devices and limitations are quite well understood. For low-energy dynamic SIMS on organic optoelectronic devices, sputter-induced diffusion processes and roughness formation have only been investigated sparsely. In this work we use low-energy dynamic SIMS depth profiling on metal-organic multilayered model samples with compositions similar to organic optoelectronic devices to investigate limitations in the calculation of interface widths due to sputter-induced roughness formation. The samples consist of silver and organic compounds (e.g., tris(8-hydroxyquinolinato) aluminum (Alq(3)) and metal phthalocyanines) sequentially deposited by thermal evaporation in vacuum onto a Si substrate. They are analyzed by a 500 eV Cs(+) primary ion beam. Surface roughness at the SIMS crater bottoms is characterized by AFM as a function of crater depth. We find that the roughness in SIMS craters is limited to approximately 1.5 nm, which is much smaller than the interface width of the as-deposited interfaces. Thus, for the studied organic-inorganic interfaces, low-energy dynamic SIMS can yield accurate information about interface morphology, allowing the study of its dependence on sample preparation conditions and its implication on device properties.

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Section: Resultsmentioning

confidence: 96%

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry

Philipp¹,

Ngo²,

Shtein

et al. 2012

Anal. Chem.

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“…1 for PMMA. No significant roughness with amplitudes higher than 1 nm is developing, in contrast to what is observed for inorganic samples [ 26 – 27 ]. Only a change in the surface structure from a larger to a finer grain structure is observed.…”

Section: Resultsmentioning

confidence: 97%

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

Rzeznik

Fleming

Wirtz

et al. 2016

Beilstein J. Nanotechnol.

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SummarySecondary ion mass spectrometry (SIMS) on the helium ion microscope (HIM) promises higher lateral resolution than on classical SIMS instruments. However, full advantage of this new technique can only be obtained when the interaction of He+ or Ne+ primary ions with the sample is fully controlled. In this work we investigate how He+ and Ne+ bombardment influences roughness formation and preferential sputtering for polymer samples and how they compare to Ar+ primary ions used in classical SIMS by combining experimental techniques with Molecular Dynamics (MD) simulations and SD_TRIM_SP modelling. The results show that diffusion coefficients for He, Ne and Ar in polymers are sufficiently high to prevent any accumulation of rare gas atoms in the polymers which could lead to some swelling and bubble formation. Roughness formation was also not observed. Preferential sputtering is more of a problem, with enrichment of carbon up to surface concentrations above 80%. In general, the preferential sputtering is largely depending on the primary ion species and the impact energies. For He+ bombardment, it is more of an issue for low keV impact energies and for the heavier primary ion species the preferential sputtering is sample dependent. For He+ steady state conditions are reached for fluences much higher than 1018 ions/cm2. For Ne+ and Ar+, the transient regime extends up to fluences of 1017–1018 ions/cm2. Hence, preferential sputtering needs to be taken into account when interpreting images recorded under He+ or Ne+ bombardment on the HIM.

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“…15 The successful depth profiling of metal−organic multilayered samples 16 and the ability to extract information on the interface morphology 17 have been reported previously. This includes the control of roughness formation for the experimental conditions used 18,19 and of Cs−O nanodot formation in the areas irradiated by a Cs + primary ion beam 20 due to the high mobility of cesium. 21 Depth profiles presented in previous work also show high Ag secondary ion intensities inside the organic layer.…”

Section: ■ Introductionmentioning

confidence: 99%

Silver Diffusion in Organic Optoelectronic Devices: Deposition-Related Processes versus Secondary Ion Mass Spectrometry Analysis Artifacts

et al. 2015

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The development of organic optoelectronic devices relies on controlling interfaces during thin-film deposition and requires an accurate characterization of the film composition at these interfaces. Dynamic secondary ion mass spectrometry (SIMS) is widely used to investigate multilayer thin-film structures. Routine analysis protocols are well established for classical semiconductor samples, but for organic or mixed metallic−organic samples the limitations of the technique are less well established. In the current work, low-energy dynamic SIMS is used on metal−organic multilayered model structures similar to those in organic optoelectronic devices to study the origin of diffusion of metal into the organic layer (e.g., irradiation-induced diffusion during SIMS analysis or during the deposition process). Samples contain silver and organic compounds sequentially deposited by thermal evaporation in vacuum onto a Si substrate. They are analyzed using a 250 eV to 1 keV Cs + primary ion beam. It is found that the mixing of silver into the organic layer depends on the impact energy and the conditions for sample preparation. This irradiation effect can be minimized by a back-side depth profiling approach, which was developed in this work. By applying this method, it is shown that some silver is likely to diffuse into the organic layers during the deposition process.

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Roughness formation in (100) silicon during low‐energy Cs⁺ bombardment

Cited by 4 publications

References 28 publications

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

Silver Diffusion in Organic Optoelectronic Devices: Deposition-Related Processes versus Secondary Ion Mass Spectrometry Analysis Artifacts

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Roughness formation in (100) silicon during low‐energy Cs+ bombardment

Cited by 4 publications

References 28 publications

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs+ Probe in Dynamic Secondary Ion Mass Spectrometry

Experimental and simulation-based investigation of He, Ne and Ar irradiation of polymers for ion microscopy

Silver Diffusion in Organic Optoelectronic Devices: Deposition-Related Processes versus Secondary Ion Mass Spectrometry Analysis Artifacts

Contact Info

Product

Resources

About

Roughness formation in (100) silicon during low‐energy Cs⁺ bombardment

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry

Ag-Organic Layered Samples for Optoelectronic Applications: Interface Width and Roughening Using a 500 eV Cs⁺ Probe in Dynamic Secondary Ion Mass Spectrometry