“…The amount of W is above 20% in the top half of the deposit, close to the surface, but decreases to below 10% in the bottom half of the deposit, near the substrate. In order to understand this behavior, simulations on 30 kV Ga + irradiation at a normal incidence of a 30 nm thick W(CO) 6 film on a silicon substrate have been performed using the SDTRIMSP code [56], which is based on TRIM [57,58] but allows for dynamics simulations, modelling ion-beam processes as a function of fluence while taking diffusion processes into account [59,60]. For the simulations in this work, the KrC potential has been used for interatomic interactions, the Oen-Robinson model for electronic stopping, and the Gauss-Mehler method with 16 pivots for integration.…”