Roughness evolution of Si surfaces upon Ar ion erosion

Rooij-Lohmann, V.I.T.A. de; Кожевников, И. В.; Peverini, Luca; Ziegler, Eric; Cuerno, Rodolfo; Bijkerk, Frederik; Yakshin, Andrey

doi:10.1016/j.apsusc.2010.03.045

Cited by 10 publications

(4 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The scaling exponents α = 0.26 ± 0.03 and β = 0.23 ± 0.02 are the same for both samples, i.e., independent of the roughness statistical parameters and of the crystallographic orientation of the Si substrate. Notice that, this independence of the scaling exponents on the substrate roughness was also observed in [10] during Ar ion etching of Si substrates. At the same time, the authors of [21] observed during heteroepitaxial growth of Fe films on Si substrates a difference between the scaling exponents depending on the crystallographic orientation of the substrate.…”

Section: Discussionsupporting

confidence: 70%

“…However, as was indicated in [8], this simple expression ignores the fact that the memory of the initial roughness is lost during the growth process. Moreover, this expression cannot explain the surface smoothening observed in a number of experiments in the initial stages of film growth [4,5,9] and ion etching [10]. The authors of [8] analyzed the problem in more detail within the linear theory of film growth and demonstrated that equation ( 1) is still valid if we consider the contribution of the rough substrate to the film evolution to depend on the deposition time, i.e., σ S → σ S (t) in equation ( 1), and to decay universally upon film growth as…”

Section: Introductionmentioning

confidence: 91%

See 1 more Smart Citation

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate

Filatova

Peverini

Ziegler

et al. 2010

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We present an experimental study of the evolution of the surface of a growing film as a function of the statistical parameters of the virgin substrate roughness. The growth of sputter-deposited Al(2)O(3) films onto Si substrates was followed in situ using an x-ray scattering technique. Despite the use of substrates presenting different roughness correlation length and crystallographic orientation, the evolution of the film roughness is demonstrated to obey the same scaling law, i.e., with the same static and dynamic exponents. Approaches to accurately determine the scaling exponents from x-ray scattering data are discussed.

show abstract

Section: Discussionsupporting

confidence: 70%

Section: Introductionmentioning

confidence: 91%

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate

Filatova

Peverini

Ziegler

et al. 2010

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…The samples investigated were Si-terminated ML stacks consisting of 50 Mo/Si bilayers deposited on an ultra-smooth Si wafer. They were produced by magnetron sputtering, with post-deposition polishing of the individual Si layers by low energy Kr ions [19,20]. The layer thicknesses were ∼3 nm (Mo) and ∼4 nm (Si).…”

Section: Methodsmentioning

confidence: 99%

Hydrogen-induced blistering mechanisms in thin film coatings

Kuznetsov

Gleeson

Bijkerk

2011

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We report on the mechanisms of hydrogen-induced blistering of multilayer coatings. Blister formation is a result of highly localized delamination occurring at the two outermost metal-on-silicon interfaces. The number, size, and type of blisters formed varied depending on the composition and ion energy of the incident flux. The results are explained in terms of the multilayer structure being simultaneously susceptible to blistering via two independent mechanisms. A high density of small blisters developed when relatively energetic (several 100 eV) ions were present. Independently, a hydrogenation process that was facilitated by the presence of a small flux of low energy ions (≤ 50 eV) induced a low density of large blisters.

show abstract

“…These were deposited by magnetron sputtering using in-house deposition facilities. An additional ion polishing step was applied to the Si layers in order to minimize the development of interfacial roughness during the course of the deposition[59,60]. (2013) 113507-113512. http://dx.doi.org/10.1063/1.4821844 resonance in the nuclear reaction at 6.385 MeV, were detected with a 4x4 inch bismuth germanate scintillation detector placed directly behind the sample.…”

mentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H 2 filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Moon -Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H 2-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H 2 filled blisters across the outermost Moon -Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

show abstract

Roughness evolution of Si surfaces upon Ar ion erosion

Cited by 10 publications

References 18 publications

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate

Hydrogen-induced blistering mechanisms in thin film coatings

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Contact Info

Product

Resources

About

Roughness evolution of Si surfaces upon Ar ion erosion

Cited by 10 publications

References 18 publications

Evolution of surface morphology at the early stage of Al2O3film growth on a rough substrate

Evolution of surface morphology at the early stage of Al2O3film growth on a rough substrate

Hydrogen-induced blistering mechanisms in thin film coatings

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Contact Info

Product

Resources

About

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate

Evolution of surface morphology at the early stage of Al₂O₃film growth on a rough substrate