Room temperature ultrafast InGaAs Schottky diode based detectors for terahertz spectroscopy

Daghestani, Nart; Parow-Souchon, Kai; Pardo, Diego; Liu, Hairui; Brewster, N.; Frogley, Mark D.; Cinque, Gianfelice; Alderman, Byron; Huggard, P. G.

doi:10.1016/j.infrared.2019.01.014

Cited by 15 publications

(5 citation statements)

References 11 publications

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“…Solid-state electronic devices are significantly faster than these. For example, Schottky diodes have τ ≥ 5 ps with NEP ∼100 pW Hz –1/2 , but their performances rapidly decrease with operational frequency greater than 3 THz or when implemented in an array configuration . CMOS-based FETs are best suited for multipixel integration; broadband operation up to 9 THz with NEP ∼10 pW Hz –1/2 and with τ < 1 μs has been reported. , …”

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confidence: 99%

HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise

et al. 2020

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Uncooled terahertz photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < nW/Hz1/2) over a broad (0.5–10 THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ∼10–11), metrology, quantum information, security, imaging, optical communications. However, present terahertz receivers cannot provide the required balance between sensitivity, speed, operation temperature, and frequency range. Here, we demonstrate uncooled terahertz PDs combining the low (∼2000 k B μm–2) electronic specific heat of high mobility (>50 000 cm2 V–1 s–1) hexagonal boron nitride-encapsulated graphene, with asymmetric field enhancement produced by a bow-tie antenna, resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP ≤ 160 pW Hz–1/2), fast response time (≤3.3 ns), and a 4 orders of magnitude dynamic range, making our devices the fastest, broad-band, low-noise, room-temperature terahertz PD, to date.

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confidence: 99%

HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise

et al. 2020

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“…However, no direct measuring femtosecond electrical response has been reported by using experimentally time‐domain electrical set‐up due to the limitation in sampling ability and bandwidth. [ 3,62–65 ] Although measuring femtosecond response by using optical or spectral methods (e.g., transient absorption spectroscopy [ 66 ] ) may be feasible, the optical/spectral methods are not suitable for directly measuring electrical response time of our novel nanodevices due to the formidable difficulties in complex photo‐electronic signal conversion. Here, the ultrafast electrical responses of our nanodiodes have been demonstrated by the combination of experimental measurements, theoretical analysis, and simulation evaluation.…”

Section: Resultsmentioning

confidence: 99%

“…Direct measuring ultrafast femtosecond electrical response by using the conventional time‐domain method [ 3,62–65 ] is beyond the ability of available wide‐band oscilloscopes. Therefore, how to evaluate practical operation speed in femtosecond range is crucially important.…”

Section: Resultsmentioning

confidence: 99%

“…Different with the methods to acquire an ultrafast electronic signal in a closed circuit, a conventional time‐domain measurement method [ 3,62–65 ] with measuring accuracy limited by sampling rate and bandwidth was used to characterize the operating response time of the ultrafast active electrical device. The ultrafast electrical response was experimentally measured by using voltage pulse stimulus with nanosecond rise time.…”

Section: Resultsmentioning

confidence: 99%

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Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Li¹,

Zhang²,

He³

et al. 2021

Advanced Materials

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The tradeoff between ultrahigh speed and low power is a dominant challenge in continuously improving modern electronics. Fundamental electronic devices with ultrafast response are highly desired in low‐power electronics. However, conventional semiconductor electronic devices now near the speed limit from the physical roadblocks including short‐channel effect, restricted carrier velocity, and heat death. Currently emerging electronic devices also face formidable difficulties to achieve high‐speed performance at low operating voltage without heat disturbance. Here, a novel fabricated coplanar tip‐to‐edge semiconductor‐free nanostructure with asymmetric sub‐10 nm air channel is reported, stimulating electric‐field accelerated scattering‐free transport of electrons and resulting in ultrafast response of record sub‐picoseconds at a low turn‐on voltage around 0.7 V. Simulation results show a typical electrical response down to 64 fs, which is ≈103 times faster than that of conventional semiconductor electronic devices. The coplanar asymmetric nanostructure allows a high rectifying ratio up to 106 which is superior to that of the most promising 2D semiconducting nanodiodes. In addition, heat death is overcome due to the inherent advantages from the novel nanostructure and underlying working mechanism. The intriguing nanodiodes will attract broadly interests in electronics due to their potential as rudimentary building blocks in ultrafast electronic integrated circuits.

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“… Detector type R V NEP [nW Hz −0.5 ] Frequency (THz) Response time Ref. Graphene-based 20–600 V W −1 0.08–1 0.01–0.8/ 1.8–4.25 1 ns to 9 μs 48 , 49 , 51 – 55 Si FET 10–5000 V W −1 0.01–199 0.1–4.52 10 μs to 100 ms 39 – 46 Tunneling rectifier 4 kV W −1 2 × 10 −4 0.13 NA 56 Schottky diode 100–1000 V W −1 4 × 10 −3 –1 0.1–1 0.1 ns 57 , 58 Microbolometer 500–760 V W −1 0.1–0.2 1 140 μs 61 , 62 a VO 2 -based oscillator 21.28 GHz/W NA Optical 10 μs 74 VO 2 -based bolometer 36.9–124 V W −1 NA 0.075–0.11 83 ms 64 , 68 This work DC: 76 kV/W, AC: 66.3 MHz/W 5 0.01–0.22 308 μs a The VO 2 -based oscillator of ref. 74 works in the visible range, and the central frequency of oscillations is within the range of MHz, so between 2 and 3 orders of magnitude higher than the carrier frequency of our setup.…”

Section: Discussionmentioning

confidence: 99%

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

et al. 2023

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In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W−1 at 1 μW, with a low noise equivalent power of 5 nW.Hz−0.5 at room temperature, for a footprint of 2.5 × 10−5 mm2. The responsivity in static characterizations is 76 kV.W−1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.

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Room temperature ultrafast InGaAs Schottky diode based detectors for terahertz spectroscopy

Cited by 15 publications

References 11 publications

HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise

HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise

Sub‐Picosecond Nanodiodes for Low‐Power Ultrafast Electronics

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

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