Room temperature type-II interband cascade laser

Yang, Rui Q.; Bradshaw, John L.; Bruno, John D.; Pham, John; Wortman, D.E.; Tober, Richard L.

doi:10.1063/1.1494455

Cited by 50 publications

(21 citation statements)

References 11 publications

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“…Figure 1 shows L-I plots that were acquired in the temperature range between 80 K and 214.4 K. The maximum CW operating temperature of 214.4 K is, to the best of our knowledge, the highest published to date for an electrically mid-IR pumped laser. It is almost 70 K greater than our previous result of 150 K from a similar laser structure (8). We attribute the increase in operating temperature to modest improvements in the processing and packaging techniques.…”

Section: List Of Figurescontrasting

confidence: 46%

“…Changes in design parameters, which take advantage of the unique characteristics of the type-II band alignment to enhance quantum efficiency and minimize Auger recombination, certainly have played a key role in the rapid advances in performance characteristics reported to date (3)(4)(5)(6)(7)(8). But, since antimony-based materials have poor thermal conductivities, concerted efforts must be made to efficiently remove heat from the active region.…”

Section: List Of Figuresmentioning

confidence: 99%

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Processing Interband Cascade Laser for High Temperature CW Operation

Tober¹,

Monroy²,

Olver³

et al. 2004

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)November 2004 ARL-TN-233 SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)U.S. Army Research Laboratory 2800 Powder Mill Road Adelphi, MD 20783-1197 SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTA narrow ridge-waveguide mid-IR interband cascade laser based on Type-II InAs/GaInSb heterostructures processed with a thick gold heat spreading layer operated CW at temperatures ranging from 80 K to 214.4 K. Its differential quantum efficiency was 547% at 80 K and dropped slowly to 239% at 200 K, commensurate with a T 1 of 160.2. The device had a characteristic temperature, T 0 , of 40.2 K and showed signs of significant heating at temperatures above 200 K.

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Section: List Of Figurescontrasting

confidence: 46%

Section: List Of Figuresmentioning

confidence: 99%

Processing Interband Cascade Laser for High Temperature CW Operation

Tober¹,

Monroy²,

Olver³

et al. 2004

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“…In addition, the electrons in GaSb can move across InAs/GaSb interface into InAs layer, forming a two-dimensional electron gas in InAs side and a two-dimensional hole gas in GaSb side, which is promising for observing the Bose-Einstein condensation of excitons 14,15,16 . In practical applications, there have been many proposals for electronic and optical devices utilizing the unique characteristics of InAs/AlSb/GaSb system such as resonant tunneling structures 17,18 , infrared detectors 19 , and interband cascade laser diodes 20 . Recently, the spin-related properties of InAs/AlSb/GaSb system also attracted much interest.…”

Section: Introductionmentioning

confidence: 99%

Spin states in InAs/AlSb/GaSb semiconductor quantum wells

Yang

Chang

2009

Phys. Rev. B

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We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin-splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin relaxation time shows several peaks with increasing the Fermi wavevector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.

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“…Recently, the most competitive mid-IR semiconductor lasers are realized with GaAs-and GaSb-based III-V material system making use of their unique intersubband (Bauer, et al, 2011;Yu, Darvish, Evans, Nguyen, Slivken, & Razeghi, 2006;Slivken, Evans, Zhang, & Razeghi, 2007) and inter-band (Yang R. Q., 1995;Yang, Bradshaw, Bruno, Pham, Wortman, & Tober, 2002) cascade transition mechanisms. Meanwhile, thanks to their suppressed Auger non-radiative loss, (Zhao, Wu, Majumdar, & Shi, 2003) IV-VI lead-salt materials have also been an excellent choice of mid-IR lasers for gas sensing application, and will continue to be so in the future.…”

Section: Mid-ir Surface Emitting 2d Photonic Crystal Lasersmentioning

confidence: 99%