Room temperature two-terminal characteristics in silicon nanowires

Hu, Shu‐Fen; Wong, Wei-Zhe; Liu, S. S.; Wu, Yu‐Chung; Sung, C. L.; Huang, Tiao‐Yuan

doi:10.1016/s0038-1098(02)00807-4

Cited by 15 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The effect of a finite system size on the conductivity of a material is a subject of considerable physical interest, which has recently been lent added relevance and importance by rapid developments in nanowire synthesis and assembly [2][3][4][5][6][7][8][9][10], electrical characterization and transport measurement methods [5,[11][12][13][14][15][16][17][18][19][20][21][22]. The development of nanowires currently represents an important part of materials and applied physics research.…”

Section: Introductionmentioning

confidence: 99%

“…Reports of basic functional two-and three-terminal semiconductor nanowire devices including junctions, bipolar transistors and field-effect transistors are now widely found in the literature. The nanoscale transport properties of several important semiconductors including Si [15,16,12,5], GaAs [20], GaN [19] and Ge [23][24][25], and semi-metals [26][27][28][29][30][31][32][33] have been investigated in detail. (Bi has attracted great attention because of its unique combination of interesting properties and its potential for thermoelectric applications [28][29][30][31][32][33][34][35].)…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface effects on nanowire transport: a numerical investigation using the Boltzmann equation

Sundaram

Mizel

2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

A direct numerical solution of the steady-state Boltzmann equation in a cylindrical geometry is reported. Finite-size effects are investigated in large semiconducting nanowires using the relaxation-time approximation. A nanowire is modelled as a combination of an interior with local transport parameters identical to those in the bulk, and a finite surface region across whose width the carrier density decays radially to zero. The roughness of the surface is incorporated by using lower relaxation-times there than in the interior.An argument supported by our numerical results challenges a commonly used zero-width parametrization of the surface layer [1]. In the non-degenerate limit, appropriate for moderately doped semiconductors, a finite surface width model does produce a positive longitudinal magnetoconductance, in agreement with existing theory [1]. However, the effect is seen to be quite small (a few per cent) for realistic values of the wire parameters even at the highest practical magnetic fields. Physical insights emerging from the results are discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Surface effects on nanowire transport: a numerical investigation using the Boltzmann equation

Sundaram

Mizel

2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…Similar nonlinear relations were observed for single-electron transport through Si nanowires lying on substrates. 23,24) We assumed that the shapes of minimum cross-sectional areas for this nanowire are circular, and estimated the maximum current density. The result is shown in Table I.…”

Section: Resultsmentioning

confidence: 99%

Growth of Silicon Nanowires by Nanometer-Sized Tip Manipulation

Kizuka

Takatani

2007

jjap

View full text Add to dashboard Cite

Polycrystalline silicon (Si) nanowires were produced inside a transmission electron microscope by manipulating a nanometersized Si tip on a Si plate, both covered with natural oxide layers in a high vacuum at room temperature. The growth procedure of Si nanowires was observed in situ by transmission electron microscopy, and their electric conductivity and mechanical strength were simultaneously measured with the functions of scanning probe microscopy. It was found that the growth was caused by the migration of atoms owing to the application of a bias voltage of 10 V. The Si nanowires showed electric conduction with a current density ranging from 10 9 to 10 11 A/m 2 .

show abstract

“…Many potential novel applications of SiNWs have been reported, including p-n junctions [5] and chemical sensors [6]. The electrical transport properties [7] and noise characteristics [8] of SiNWs have also been reported. Various fabrication methods, including laser ablation [9], chemical vapor deposition [10], and thermal evaporation [11], have been used to produce Si nanowires via a vapor-liquid-solid (VLS) process requiring Si source materials.…”

Section: Introductionmentioning

confidence: 99%

Carbon Assisted Growth and Photoluminescence of Silicon Nanowires Fabricated Without a Catalyst

Al-Ruqeishi

Nor

Amin

et al. 2009

Silicon

View full text Add to dashboard Cite

One-dimensional (1D) silicon nanowires (SiNWs) were fabricated on a catalyst free Si (100) substrate using a thermal evaporation method. Based on a SVLS growth mechanism, the SiNWs obtained were 30-265 nm in diameter and 1.7 μm to several tens of microns in length. It was found that the presence of graphite powder alone is enough to accomplish the growth. A systematic study of how the growth conditions, such as the Ar carrier gas flow rate, and the growth time effect was performed. The Photoluminescence (PL) of SiNWs was also investigated. The observed broad band is composed of an UV peak or band centered at 350 nm (3.54 eV) and a wide hemisphere curve over the green bluish region (430-550 nm). The theory behind these emissions is discussed.

show abstract

Room temperature two-terminal characteristics in silicon nanowires

Cited by 15 publications

References 10 publications

Surface effects on nanowire transport: a numerical investigation using the Boltzmann equation

Surface effects on nanowire transport: a numerical investigation using the Boltzmann equation

Growth of Silicon Nanowires by Nanometer-Sized Tip Manipulation

Carbon Assisted Growth and Photoluminescence of Silicon Nanowires Fabricated Without a Catalyst

Contact Info

Product

Resources

About