Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits

Seabaugh, Alan; Taddiken, A.H.; Beam, Edward; Randall, John N.; Kao, Yung-Chung; Newell, B

doi:10.1049/el:19931199

Cited by 24 publications

(3 citation statements)

References 2 publications

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“…Recent developments in the field of Si nanostructures [1][2][3] have made possible devices with feature sizes below 10 nm. These devices have shown exciting low-temperature transport properties 4 with promising applications in microelectronics ͑single-electron transistors and memories͒.…”

Section: Introductionmentioning

confidence: 99%

Method for tight-binding parametrization: Application to silicon nanostructures

et al. 2000

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We propose a method for tight-binding parametrization, designed to give accurate results in the calculation of confined edge states in semiconductor nanostructures of any size. Indeed, this improved tight-binding description accurately reproduces the bulk effective masses as well as the overall band structure. We apply it to the specific case of silicon. The electronic states of silicon nanostructures ͑films, wires, and dots͒, with various shapes and orientations, are calculated over large range of sizes ͑1-12 nm͒, including spin orbit. Accurate analytical laws for the confinement energies, valid over the whole range of sizes, are derived. Consistent comparison with the effective mass and k•p methods show that these are only of semiquantitative value even for sizes as large as 8 nm. The reasons for the failure of these techniques is analyzed in detail.

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Section: Introductionmentioning

confidence: 99%

Method for tight-binding parametrization: Application to silicon nanostructures

et al. 2000

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“…The new transistors can reduce the number of transistors per circuit function and open up opportunities for innovative architectures. 1,2 However, in field effect transistors, manifestation of quantum effects and single-electron Coulomb blockade usually requires extremely low temperatures such as sub-liquid helium temperatures. Furthermore, the quantum effect and Coulomb blockade transistors are typically fabricated in III-V compound semiconductors instead of Si-the backbone material of the integrated circuit ͑IC͒ industry.…”

mentioning

confidence: 99%

Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K

Leobandung

Guo

Wang

et al. 1995

Applied Physics Letters

230

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We report the fabrication and characterization of lithographically defined nanoscale silicon quantum-dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong current oscillations due to quantum confinement and single-electron charging effects. In the propagating regime, a different kind of current modulation has been observed, which is attributed to the interference between different modes of quantum waves in a cavity. Proper scaling of these transistors should lead to operation at room temperature and a bias of 0.3 V.

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“…Such devices have a potential to produce analog and digital circuits with reduced complexity and size and several memory and logic devices (SRAMs, XNORs, etc.) have been demonstrated [3,4,5]. The challenge has been to have achieve high, reproducible PVCRs by judicious choice of heterojunction material structures and molecular beam epitaxy growth conditions [6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of heterojunction interband tunneling diodes for MMICs

El‐Zein

Maracas²,

Nair³

et al. 1997

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

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Heterostructure Interband Tunneling Diodes (HITDs) show great potential for power generation at high frequencies. Voltage Controlled Oscillators (VCOs) that utilize the negative differential resistance (NDR) region of the HITFET have been demonstrated and exhibit a wider tuning range than conventional ET-based VCOs. Additionally, the center frequency can be tuned by either drain or gate bias. MMIC VCOs that incorporate HITFETs require fewer passive components when compared to conventional VCO designs.A Voltage Controlled Oscillator (VCO) consisting of an InAlAs/InGaAs interband tunneling diode connected onto the source of a heterojunction InGaAs channel FET has been demonstrated. Precise control of the center frequency (X-band) and the tuning range (-20 MHz) were achieved by varying the drain and gate voltages (-1 V) of the HITFET. Since repeatability of the HITD equivalent circuit is crucial for accurate circuit design and circuit operation, a discussion of the growth optimization and material parameters of the diodes is presented. Secondary Ion Mass Spectrometry (SIMS), Transmission Electron Microscopy ( E M ) and electrolytic capacitance voltage (ECV) profiling are used to study the effect of dopant compensation and dopant diffusion on the I-V characteristics and the peak-to-valley current ratios (PVCRs) of the HITDs. The data shows an exponential dependence of the PVCR on oxygen background concentration in the sample.It also shows that the presence of doping impurities in the well region (which is determined using SIMS analysis) produces a dramatic degradation of the PVCR and peak current density.

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Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits

Cited by 24 publications

References 2 publications

Method for tight-binding parametrization: Application to silicon nanostructures

Method for tight-binding parametrization: Application to silicon nanostructures

Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K

Analysis of heterojunction interband tunneling diodes for MMICs

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