Abstract:Heterostructure Interband Tunneling Diodes (HITDs) show great potential for power generation at high frequencies. Voltage Controlled Oscillators (VCOs) that utilize the negative differential resistance (NDR) region of the HITFET have been demonstrated and exhibit a wider tuning range than conventional ET-based VCOs. Additionally, the center frequency can be tuned by either drain or gate bias. MMIC VCOs that incorporate HITFETs require fewer passive components when compared to conventional VCO designs.A Voltage… Show more
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