Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Kraus, Hannes; Soltamov, V. A.; Riedel, Daniel; Väth, Stefan; Fuchs, F.; Sperlich, Andreas; Баранов, П. Г.; Dyakonov, Vladimir; Astakhov, G. V.

doi:10.1038/nphys2826

Cited by 226 publications

(281 citation statements)

References 29 publications

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“…4d, showing the overall PL enhancement by a factor of 5.5. This corresponds to N ¼ 3:9Â10 16 cm À 3 and demonstrates that V Si defects can be created at high density in a controlled manner, as required, for instance, for the implementation of a SiC maser 12 .…”

Section: Resultsmentioning

confidence: 77%

“…The dangling bonds of four C atoms with the absent Si atom result in formation of energy levels within the forbidden gap (3.23 eV) of 4H-SiC 24,25 . In case of negatively charged V Si , five electrons form a spin quadruplet (S ¼ 3/2) in the ground state 12,26 . To excite these defects we use sub-band gap excitation of SiC at a laser wavelength of 785 nm (hn ¼ 1.58 eV), which is close to their optimal excitation wavelength 27 .…”

Section: Resultsmentioning

confidence: 99%

“…As has been mentioned in the introductory part, the generation of optically active spins is important for solid-state quantum ARTICLE computing and communications, sensing, precision measurement and so on [1][2][3][4][5]12,16,23 . Very recently, single emitters in the visible spectral range have been isolated in SiC wafers 20 and nanoparticles 35 .…”

Section: Discussionmentioning

confidence: 99%

“…Such single quantum systems have been realized using quantum dots 6 , colour centres in diamond 7 , dopants in nanostructures 8 and molecules 9 . More recently, ensemble emitters with spin dephasing times in the order of microseconds and room-temperature optically detectable magnetic resonance (ODMR) have been identified in silicon carbide (SiC) [10][11][12] , a compound being highly compatible to up-to-date semiconductor device technology. Until recently, however, the engineering of such spin centres in SiC on the single-emitter level has remained elusive 13 .…”

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confidence: 99%

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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption crosssection, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

et al. 2015

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“…These electron spins can be optically initialized and read out [2,6-9], making them very attractive candidates for QIP and related applications [10][11][12]. Among these qubits, silicon-vacancy related defects in hexagonal polytypes of SiC, such as 4H -and 6H -SiC, have shown favorable spin properties [13,14], demonstrated even at a single defect level at room temperature [4]. Two and three different silicon-vacancy related centers were observed in 4H -and 6H -SiC, where the corresponding photoluminescence (PL) lines are denoted as V1 and V2, and V1, V2, and V3, [15,16], respectively.…”

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Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide

et al. 2017

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The identification of a microscopic configuration of point defects acting as quantum bits is a key step in the advance of quantum information processing and sensing. Among the numerous candidates, silicon-vacancy related centers in silicon carbide (SiC) have shown remarkable properties owing to their particular spin-3/2 ground and excited states. Although, these centers were observed decades ago, two competing models, the isolated negatively charged silicon vacancy and the complex of negatively charged silicon vacancy and neutral carbon vacancy [Phys. Rev. Lett. 115, 247602 (2015)], are still argued as an origin. By means of high-precision first-principles calculations and high-resolution electron spin resonance measurements, we here unambiguously identify the Si-vacancy related qubits in hexagonal SiC as isolated negatively charged silicon vacancies. Moreover, we identify the Si-vacancy qubit configurations that provide room-temperature optical readout. DOI: 10.1103/PhysRevB.96.161114 Point defects in solids acting as quantum bits (qubits) are a highly promising platform for quantum information processing (QIP) and nanoscale sensor applications where typically their electron spin provides the functional quantum states. There are qubits that have long electron spin coherence times [1][2][3][4][5], and some of them have been demonstrated to persist up to room temperature [1,4]. These electron spins can be optically initialized and read out [2,6-9], making them very attractive candidates for QIP and related applications [10][11][12]. Among these qubits, silicon-vacancy related defects in hexagonal polytypes of SiC, such as 4H -and 6H -SiC, have shown favorable spin properties [13,14], demonstrated even at a single defect level at room temperature [4]. Two and three different silicon-vacancy related centers were observed in 4H -and 6H -SiC, where the corresponding photoluminescence (PL) lines are denoted as V1 and V2, and V1, V2, and V3, [15,16], respectively. The V2 line in 4H -SiC [4] and the V2 and V3 lines in 6H -SiC [13] are sufficiently strong to observe their corresponding electron spin via optically detected magnetic resonance (ODMR) measurements at room temperature. In particular, it has been demonstrated that the V2 color center in 4H -SiC can be used for magnetometer [17][18][19][20] and nanoscale thermometer [21] applications and as a room-temperature maser [14].Today, it is widely accepted that V1-V3 PL lines and T V1 -T V3 electron paramagnetic resonance (EPR) signals in 4H -and 6H -SiC are related to spin-3/2 negatively charged silicon vacancies [22][23][24][25]. On the other hand, the actual microscopic configuration of these vacancy related centers is still debated. The unanswered question is whether these centers are isolated silicon vacancies [V Si difference between the two models is how the observed finite zero-field splitting (ZFS) of the ground-state spin sublevels is explained. In model I, it is assumed that the C 3v symmetric crystal field, allowing nonzero ZFS [26], is strong enough t...

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Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

Krieger¹,

Weber²

2021

Wide Bandgap Semiconductors for Power Electronics

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Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Cited by 226 publications

References 29 publications

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide

Epitaxial Graphene on Silicon Carbide as a Tailorable Metal–Semiconductor Interface

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