Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates

Moneger, S.; Tabata, A.; Bru, C.; Guillot, G.; Georgakilas, A.; Zekentes, K.; Halkias, G.

doi:10.1016/0921-5107(93)90343-l

Cited by 2 publications

(3 citation statements)

References 14 publications

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“…The emission was detected by a 0.32 m monochromator and a cooled Ge photodiode. Experimental apparatus for PR [9] measurements have been described elsewhere.…”

Section: Methodsmentioning

confidence: 99%

“…These observations suggest that the plasma produces defects at the surface which behave as non-radiative recombination centres at the InGaAs/InP interface of the quantum well. The defects could be structural or H-related defects produced by the impact of the plasma species (H+, H • , H + 2 , H 2 , H • 2 ) on the surface (typical ion energy ∼ 20 eV) [8,9]. These defects are removed by the 10 min anneal resulting in the recovery of the PL intensity.…”

Section: Optimization Of the H-plasma Treatment On A Clean Inp Surfacementioning

confidence: 99%

“…The PR spectra provide the band to band transitions. The width of the PR signal is characterized by the broadening parameter , which increases with alloy and interface disorders [9].…”

Section: Thermal Versus H-plasma Oxide Desorptionmentioning

confidence: 99%

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Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well

Drouot

Robinson

Thompson

et al. 1996

Semicond. Sci. Technol.

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An InGaAs single quantum well structure has been used to investigate the effect of H-plasma exposure for oxide removal and subsequent regrowth on InP surfaces. In addition, the H-plasma desorption is compared with the usual technique of thermal desorption of the oxide. Assessment of the optical quality of the regrowth interface has been achieved by photoluminescence (PL), photoluminescence excitation (PLE) and photoreflectance (PR) spectroscopy studies of the quantum well grown directly on the regrowth interface. It is shown that the effect of the H-plasma itself on the InP surface can be minimized by applying a positive bias of +30 V to the substrate or by annealing the substrate. For both the H-plasma and the thermal surface cleaning treatments, the regrowth procedure on air/UV-ozone exposed samples introduces non-radiative defects which strongly degrade the room-temperature PL efficiency. The regrowth procedure also induces a defect-related peak in the low-temperature PL spectra, 15 meV below the quantum well intrinsic PL line. The defect concentration is higher in the case of the H-plasma desorption than in thermal desorption, as deduced from PL measurements. The PLE and PR measurements confirm that the interface disorder is also higher in the H-plasma cleaned sample.

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“…The emission was detected by a 0.32 m monochromator and a cooled Ge photodiode. Experimental apparatus for PR [9] measurements have been described elsewhere.…”

Section: Methodsmentioning

confidence: 99%

Section: Optimization Of the H-plasma Treatment On A Clean Inp Surfacementioning

confidence: 99%

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Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well

Drouot

Robinson

Thompson

et al. 1996

Semicond. Sci. Technol.

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Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures

Arbiol

Peiró

Cornet

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this work we studied the possibility of improving InGaAs/InAlAs-on-InP high electron mobility transistor (HEMT) devices by using temperature-graded InAlAs buffer layers with growing temperatures in the range of Tg=250–560 °C. Our specimens were grown by molecular beam epitaxy and we analyzed them using plane view and cross-sectional transmission electron microscopy, atomic force microscopy, scanning electron microscopy and Hall effect measurements. We found that growth at the optimum temperature (Tg=530 °C) of a thin InAlAs buffer sublayer between the InP substrate and the thick InAlAs buffer layer (grown at low or high Tg) can dramatically improve the crystalline quality of our HEMT devices. Therefore the growth temperature of the buffer could be used as engineering parameter to tailor the electronic properties of InAlAs layers without interfering with the layers’ crystalline quality, already assured by the first optimized nanometers.

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Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates

Cited by 2 publications

References 14 publications

Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well

Evaluation of H-plasma and thermal oxide desorption procedures for MBE regrowth of an InP/InGaAs/InP quantum well

Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures

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