Room temperature photoluminescence from etched silicon surfaces: The effects of chemical pretreatments and gaseous ambients

Canham, Leigh

doi:10.1016/0022-3697(86)90026-0

Cited by 15 publications

(1 citation statement)

References 40 publications

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“…Bulk silicon has a relatively small and indirect energy gap that leads to room temperature ͑RT͒ near band-edge luminescence at around 1.09 eV. [1][2][3] On the contrary, photoluminescence ͑PL͒ of nanoscale silicon structures such as porous silicon, nanowires, and quantum dots shows additional highenergy peaks in room temperature PL spectra 4 that are mediated by the nanoscale features. In the scientific literature few mechanisms have been thoroughly discussed as being responsible for the various PL features reported in porous silicon.…”

Section: Introductionmentioning

confidence: 99%

Roughness of silicon nanowire sidewalls and room temperature photoluminescence

et al. 2010

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Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in silicon nanowires (SiNWs) that were realized by wet chemical etching of heavily (arsenic, As: 10(20) cm(-3)) and lowly doped (boron, B: 10(15) cm(-3)) single crystalline silicon (Si) wafers. Optical characterization of these SiNWs by PL combined with structural characterization by transmission and scanning electron microscopy strongly suggest that the visible PL at room temperature results from the rough SiNW sidewall structure that is composed of nanoscale features in which quantum confinement effects may occur

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Section: Introductionmentioning

confidence: 99%

Roughness of silicon nanowire sidewalls and room temperature photoluminescence

et al. 2010

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Interface Recombination Velocity at the Si/SiO2 Interface Determined from Bias-Dependent Photoluminescence

Stein

Röppischer

1991

Phys. Stat. Sol. (a)

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The photoluminescence field effect is used to study the recombination at the Si/SiO, interface. Experiments and theoretical considerations show that the field-induced quenching of the photoluminescence intensity is due to increasing interface recombination velocity. The influence of a "dead" depletion layer free of recombination radiation on the photoluminescence intensity is found to be negligible. This fact enables one to determine quantitatively the interface recombination velocity from the normalized photoluminescence intensity. The determination of interface state parameters is discussed. Der Photolumineszenzfeldeffekt wird benutzt, um die Rekombination an der Si/SiO,-Grenzflache zu untersuchen. Die Experimente und theoretischen Untersuchungen lassen den SchluB zu, daB die feldinduzierte Abnahme der Photolumineszenzintensitlt durch eine erhohte Grenzflachenrekornbinationsgeschwindigkeit verursacht wird. Der EinfluB einer ,,toten" Verarmungsrandschicht ohne Strahlungsemission auf die Photolumineszenzintensitat ist hierbei vernachlassigbar. Diese Tatsache erlaubt eine quantitative Bestimmung der Grenzflachenrekombinationsgeschwindigkeit aus der normierten Photolumineszenzintensitat. Die Moglichkeit der Bestimmung von Parametern der Grenzflachenzustande wird diskutiert.

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Photoluminescence of Inorganic Semiconductors for Chemical Sensor Applications

Meyer

1999

Optoelectronic Properties of Inorganic Compounds

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Room temperature photoluminescence from etched silicon surfaces: The effects of chemical pretreatments and gaseous ambients

Cited by 15 publications

References 40 publications

Roughness of silicon nanowire sidewalls and room temperature photoluminescence

Roughness of silicon nanowire sidewalls and room temperature photoluminescence

Interface Recombination Velocity at the Si/SiO2 Interface Determined from Bias-Dependent Photoluminescence

Photoluminescence of Inorganic Semiconductors for Chemical Sensor Applications

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