Room temperature particle detectors based on indium phosphide

Yatskiv, Roman; Grym, Jan; Žďánský, K.; Pekárek, L.

doi:10.1016/j.nima.2009.10.172

Cited by 2 publications

(3 citation statements)

References 11 publications

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“…Description of this conversion was given elsewhere [16]. Comparison of the pulse-height spectrum of 5.48 MeV α-particles measured at RT for particle detectors with p-n junction and detectors based on bulk InP [12], are presented in figure 3. The high level of the detector background signal at low energy for the detectors based on bulk InP can be explained by the noise due to leakage current and imperfect metal/InP interface.…”

Section: Resultsmentioning

confidence: 99%

“…An alternative approach to the preparation of SI InP can be achieved by the high temperature annealing of undoped InP in a pure phosphorus or an iron phosphide ambient [11]. Prototype detectors based on the SI InP prepared by: (i) co-doping with Ti+Mg, Ti+Zn and (ii) using undoped InP annealed in a pure phosphorus ambient were fabricated in our laboratory [12].…”

Section: Introductionmentioning

confidence: 99%

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Particle detectors based on semiconducting InP epitaxial layers

Yatskiv¹,

Grym²,

Žďánský

2011

J. Inst.

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A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP:Pr layers of both n-and p-type conductivity with carrier concentration on the order of 10 14 cm −3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241 Am source at room temperature.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Particle detectors based on semiconducting InP epitaxial layers

Yatskiv¹,

Grym²,

Žďánský

2011

J. Inst.

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“…Concerning the application of InP in radiation detectors, the large values of Z of In (49), high density (4.79 g/cm 3 ) and wide band-gap energy (1.34 eV) are appreciated. As a base detector material, InP can be used in a form of semiconducting epitaxial layers [1] or bulk grown semi-insulating crystals [2][3][4][5]. However, the exploitation of its potential is limited due to difficulties in realizing highly rectifying contacts on n-type materials.…”

Section: Jinst 7 C10005mentioning

confidence: 99%

Particle detectors based on InP Schottky diodes

Yatskiv

Grym

2012

J. Inst.

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A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241 Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.

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Room temperature particle detectors based on indium phosphide

Cited by 2 publications

References 11 publications

Particle detectors based on semiconducting InP epitaxial layers

Particle detectors based on semiconducting InP epitaxial layers

Particle detectors based on InP Schottky diodes

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