Particle detectors based on InP Schottky diodes

Abstract

A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241 Am source at room temperature. The influence of the quality of p-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed.