Room-temperature operation of lattice-matched InP/Ga0.47In0.53As/InP double-heterostructure lasers grown by MBE

Miller, B. I.; McFee, J. H.; Martin, R. J.; Tien, P. K.

doi:10.1063/1.90186

Cited by 54 publications

(2 citation statements)

References 16 publications

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“…In order to achieve resonance at λ (2) we have designed a cavity containing a InP/Ga 0.47 In 0.53 As/InP heterostructure with undoped layers (layers b/a/b of Fig. 1) [21] with a Polyethyl methacrylate (PMMA) substrate (layer c of Fig. 1) for the bilayer graphene and silver mirrors (layers d of Fig.…”

Section: The Scenario Dramatically Changes When Amentioning

confidence: 99%

Harnessing quadratic optical response of two-dimensional materials through active microcavities

Ciattoni

Rizza

2014

Phys. Rev. A

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We propose a method for efficiently harnessing the quadratic optical response of two-dimensional graphene-like materials by theoretically investigating second harmonic generation from a current biased sheet placed within a planar active microcavity. We show that, by tuning the cavity to resonate at the second harmonic frequency, a highly efficient frequency doubling process is achieved (several order of magnitude more efficient than the free-standing sheet). The efficiency of the process is not due to phase-matching, which is forbidden by the localization of the nonlinear quadratic response on the two-dimensional atomic layered material, but it stems from the interplay between the two-dimensional planar geometry of the nonlinear medium and the field oscillation within the active cavity near its threshold. The suggested method can easily be extended to different waves interactions and nonlinearities and therefore it can represent a basic tool for efficiently exploiting nonlinear optical properties of two-dimensional materials.PACS numbers: 42.65. Ky, 81.05.ue, Two-dimensional materials and their prototype, graphene, have proved to be particularly suitable for optoelectronic applications [1, 2] mainly since the Dirac cones characterizing their electronic band structures yield large carrier mobility and broadband light-coupling [3]. Such resonant optical interaction also provides graphene with a large and broadband third order optical nonlinearity [4, 5] whose effect have been observed [6]. Since graphene is a centrosymmetric material, nonlinear effects due to second order optical nonlinearity are generally forbidden unless the space inversion symmetry is broken [8] and biasing the sample with a direct current injection has been shown to be an efficient technique for observing second harmonic generation [9,10]. Particulary interesting is current-biased bilayer graphene which, due to its fourband electronic structure and widely tunable bandgap in the mid-infrared, has been shown to exhibit a marked quantum-enhanced and tunable quadratic response [11].Even though graphene-like materials have nonlinear properties much stronger than bulk materials, exploiting the ensuing nonlinear optical effects for conceiving light steering devices is hampered by their very small thickness. A possible way for overcoming such limitations is to resort to field enhancement mechanisms [12][13][14][15][16] which have to be compatible with the planar geometry of two-dimensional materials. Recently, strong field enhancement effects have been considered in the presence of graphene [17,18]. However, to the best of our knowledge, achieving feasible nonlinear light steering by combining graphene optical nonlinearity with a field enhancement mechanism has been shown in a single paper by Gu et al. [19] where the authors show that placing a graphene sheet on the top of a silicon photonic crystal hosting a high-Q cavity (responsible for a large in-cavity field enhancement) produces optical bistability, self induced regenerative oscillations and coh...

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Section: The Scenario Dramatically Changes When Amentioning

confidence: 99%

Harnessing quadratic optical response of two-dimensional materials through active microcavities

Ciattoni

Rizza

2014

Phys. Rev. A

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“…The conventional method of InP substrate cleaning for molecular beam epitaxy (MBE) includes a flash annealing at around 500 1C in the growth chamber under phosphorous vapor pressure, which is carried out after degassing at much lower temperature without phosphorous pressure in the preparation chamber [1,2]. During this annealing, a large amount of oxygen-included impurity gases, such as CO, CO 2 , and H 2 O are emitted in the growth chamber, which deteriorate the quality of vacuum, and furthermore promote oxidization of the source materials such as Ga and Al in K-cells.…”

Section: Introductionmentioning

confidence: 99%