Room-temperature operation of 3.26μm GaSb-based type-I lasers with quinternary AlGaInAsSb barriers

Abstract

Continuous-wave room temperature operated 3.0 μ m type I GaSb-based lasers with quinternary AlInGaAsSb barriers Appl. Phys. Lett. 92, 091106 (2008); 10.1063/1.2890053 High-peak-power pulsed operation of 2.0 μ m (AlGaIn)(AsSb) quantum-well ridge waveguide diode lasers J. Appl. Phys. 99, 053105 (2006); 10.1063/1.2179121Extraordinarily wide optical gain spectrum in 2.2-2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers

Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy

“…3,4 Recently, however, AlGaInAsSb alloys have been grown by molecular beam epitaxy and effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 5 Here we report on the liquid phase epitaxial growth of GaInAsSbP pentanary alloys and demonstrate room temperature photoluminescence ͑PL͒ in the 3 -4 m spectral range.Epitaxial growth of pentanary GaInAsPSb single epilayers was carried out from antimony-rich melts onto Ge doped p-type GaSb ͑100͒ substrates. Growth melts were prepared from 6N Sb and 7N In pure metals, while the sources of Ga, As, and P were undoped polycrystalline GaSb, InAs, and InP binary compounds.…”

“…3,4 Recently, however, AlGaInAsSb alloys have been grown by molecular beam epitaxy and effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 5 Here we report on the liquid phase epitaxial growth of GaInAsSbP pentanary alloys and demonstrate room temperature photoluminescence ͑PL͒ in the 3 -4 m spectral range.…”

Room temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes

“…6,7 Recently, AlGaInAsSb alloys grown by molecular beam epitaxy have been effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 8 In this letter the epitaxial growth of GaInAsPSb/ GaSb p-i-n structures from the liquid phase and a study of their electroluminescence properties are presented.Epitaxial growth of Ga 1−x In x As y P z Sb l-y-z single epilayers as well as p-i-n homostructures in which p-type layers were doped with Zn ͑1 ϫ 10 18 cm −3 ͒ and n-type layers were doped with Te ͑4 ϫ 10 17 cm −3 ͒ was carried out from antimony-rich melts onto Ge doped p-type GaSb ͑100͒ substrates. The use of antimony as the solvent for LPE growth of GaSb-related alloys has some advantages 9,10 compared with the more conventional techniques based on the low melting point metals, using In or Ga as solvents, namely, ͑1͒ Growth from Sb solution decreases the concentration of stoichiometric defects such as V Ga +Ga Sb , ͑2͒ etchback of the GaSb substrate is essentially decreased, leading to improved crystalline quality of the epitaxial layers and the heterostructure as a whole, and ͑3͒ the same solvent can be used for all stages of the heterostructure epitaxy ͑which may also include AlGaInAsSb layers͒, making it possible to obtain high reproducibility.…”

“…6,7 Recently, AlGaInAsSb alloys grown by molecular beam epitaxy have been effectively used as the barrier layers in room temperature midinfrared quantum well lasers. 8 In this letter the epitaxial growth of GaInAsPSb/ GaSb p-i-n structures from the liquid phase and a study of their electroluminescence properties are presented.…”

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

“…Hole delocalization from QWs at elevated temperatures can adversely affect both laser threshold and injection efficiency. Hole confinement can be improved by either adjustment of the barrier layer composition [10], [11] or by using InGaAsSb QWs with low arsenic contents, i.e., heavily compressively strained QWs. Introduction of compressive strain in active QWs is also known to improve the laser differential gain through the reduction of the hole density of states (DOS), i.e., through balancing the DOS in the joint electron and hole lasing subbands [12].…”