2021
DOI: 10.1109/ted.2020.3044021
|View full text |Cite
|
Sign up to set email alerts
|

Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
2

Relationship

1
1

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 26 publications
0
3
0
Order By: Relevance
“…NDR such as this often occurs in devices with near interface carrier trapping defects. , These defects are likely oxygen vacancies in the SnO 2 that trap electrons and remain ionized over a wide temperature range. , When filled, the interface traps cause an increase in the barrier height at the SnO 2 /Pt interface and a decrease in the current flowing through the device. When sufficient positive bias is applied to the adjoining contact, the traps are emptied (by electron tunneling into the Pt contact) and the device is effectively reset for the next sweep. , Supplementary Figure S2a–d shows typical device I – V characteristics with fitting applied to the high- and low-conductance regions (in which the traps are filled or in the process of being filled). Simplified band diagrams are also included (Supplementary Figure S2e) to illustrate how the potential barriers at the interfaces are modulated during the I – V sweep.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…NDR such as this often occurs in devices with near interface carrier trapping defects. , These defects are likely oxygen vacancies in the SnO 2 that trap electrons and remain ionized over a wide temperature range. , When filled, the interface traps cause an increase in the barrier height at the SnO 2 /Pt interface and a decrease in the current flowing through the device. When sufficient positive bias is applied to the adjoining contact, the traps are emptied (by electron tunneling into the Pt contact) and the device is effectively reset for the next sweep. , Supplementary Figure S2a–d shows typical device I – V characteristics with fitting applied to the high- and low-conductance regions (in which the traps are filled or in the process of being filled). Simplified band diagrams are also included (Supplementary Figure S2e) to illustrate how the potential barriers at the interfaces are modulated during the I – V sweep.…”
Section: Resultsmentioning
confidence: 99%
“…NDR such as this often occurs in devices with near interface carrier trapping defects. 31,32 These defects are likely oxygen vacancies in the SnO 2 that trap electrons and remain ionized over a wide temperature range. 30,33 When filled, the interface traps cause an increase in the barrier height at the SnO 2 /Pt interface and a decrease in the current flowing through the device.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation