Room-Temperature Negative Differential Resistance in Amorphous Carbon: The Role of Electron Trapping Defects at Device Interfaces

Lateral, Optically Controlled, Artificial Synapses Realized in Room-Temperature RF-Sputtered SnO2 for Neuromorphic Computing and Visual Recognition

“…NDR such as this often occurs in devices with near interface carrier trapping defects. , These defects are likely oxygen vacancies in the SnO 2 that trap electrons and remain ionized over a wide temperature range. , When filled, the interface traps cause an increase in the barrier height at the SnO 2 /Pt interface and a decrease in the current flowing through the device. When sufficient positive bias is applied to the adjoining contact, the traps are emptied (by electron tunneling into the Pt contact) and the device is effectively reset for the next sweep. , Supplementary Figure S2a–d shows typical device I – V characteristics with fitting applied to the high- and low-conductance regions (in which the traps are filled or in the process of being filled). Simplified band diagrams are also included (Supplementary Figure S2e) to illustrate how the potential barriers at the interfaces are modulated during the I – V sweep.…”

“…NDR such as this often occurs in devices with near interface carrier trapping defects. 31,32 These defects are likely oxygen vacancies in the SnO 2 that trap electrons and remain ionized over a wide temperature range. 30,33 When filled, the interface traps cause an increase in the barrier height at the SnO 2 /Pt interface and a decrease in the current flowing through the device.…”

“…When sufficient positive bias is applied to the adjoining contact, the traps are emptied (by electron tunneling into the Pt contact) and the device is effectively reset for the next sweep. 31,32 Supplementary Figure S2a−d shows typical device I−V characteristics with fitting applied to the high-and lowconductance regions (in which the traps are filled or in the process of being filled). Simplified band diagrams are also included (Supplementary Figure S2e) to illustrate how the potential barriers at the interfaces are modulated during the I− V sweep.…”