Electron trapping effects in SiC Schottky diodes: Review and comment

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

“…While controlled defect formation has reached an excellent level of maturity in traditional semiconductors such as Si and GaAs, this is not the case in wide-bandgap semiconductors, where the concentration of deep levels is significant and still strongly impacts the performance of the devices. In fact, deep levels are responsible for several physical phenomena, including carrier trapping, which leads to parametric instability [1][2][3][4][5] and degradation of the dynamic performance [6][7][8][9]; they can act as recombination centers [10,11], thus contributing to a decrease in the internal quantum efficiency of light emitters [12][13][14][15], a decrease in the carrier lifetime [16], and limited spectral purity of optoelectronic devices [17][18][19][20]. In addition, trap states can assist tunneling processes, which have detrimental effects on the reliability of several devices, including high electron mobility transistors (HEMTs) [21][22][23] and light-emitting diodes (LEDs) [24][25][26][27], and promote leakage current [22,28].…”

Reducing the Cut-In Voltage of a Silicon Carbide/p-Silicon Heterojunction Diode Using Femtosecond Laser Ablation

“…The automobile industry has recently shifted its attention to SiC to be used in electric vehicles. SiC-based metal oxide–semiconductor field-effect transistors (MOSFETs), , junction field-effect transistors (JFETs), and rectification diodes , are already commercially available. SiC-based integrated circuits (ICs) for operation in hash environments are currently being investigated. , …”

Rejuvenation of degraded Zener diodes with the electron wind force

“…4) Such stress can induce additional defects within the semiconductor lattice, manifesting as trap states that elevate the ideality factor, thus deviating from the ideal behavior expected from the Shockley diode equation. [12][13][14][15][16] Traditionally, thermal annealing has been used to mitigate defects to obtain improved electrical properties of semiconductor devices. [17][18][19][20] This process involves heating a material to an elevated temperature and then cooling it down.…”

“…These values correspond to ideality factors of approximately 1.16 for the pristine, 1.92 for the degraded, and 1.20 for the pulsed diode. The intentional degradation may introduce additional trap states into the device, which are imperfections in the semiconductor lattice that capture charge carriers and lead to increased recombination in the depletion region, 12,13) necessitating a higher forward voltage for the same current and resulting in a higher ideality factor of 1.92. Conversely, the reduction in the ideality factor for the pulsed diode to 1.20 suggests that the electropulsing treatment effectively reduced the recombination and thus defect density.…”