1998
DOI: 10.1038/27167
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Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure

Abstract: Nature © Macmillan Publishers Ltd 19988 the fact that we have a quantized Hall resistance deep inside the insulator. Indeed, j 2 xx j xy 2 e 2 2h 2 e 2 2 h 12e 2 =hr xy r 2 xx r 2 xy simply from matrix inversion. As noted by Shahar et al. 10 , the semicircle relation follows directly as long as r xy h=e 2 . In addition, it is completely independent of the value of r xx . We emphasize that this relation holds for our entire range of T. Ando 21 ®rst calculated numerically the dependence of j xx on j xy and found… Show more

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Cited by 2,192 publications
(1,838 citation statements)
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References 21 publications
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“…A comparison with the band-structure calculations clarifies that the double-peak structures A and B near E F correspond to the (Fe+Mo) t 2g↓ and Fe e g↑ bands, respectively. 1,6,7,8,9,11,12 Also, C and D mostly originate from the Fe t 2g↑ bands with a contribution from the O 2p intensity. E is predominantly due to the O 2p non-bonding states.…”
Section: Experiments and Calculationmentioning
confidence: 99%
“…A comparison with the band-structure calculations clarifies that the double-peak structures A and B near E F correspond to the (Fe+Mo) t 2g↓ and Fe e g↑ bands, respectively. 1,6,7,8,9,11,12 Also, C and D mostly originate from the Fe t 2g↑ bands with a contribution from the O 2p intensity. E is predominantly due to the O 2p non-bonding states.…”
Section: Experiments and Calculationmentioning
confidence: 99%
“…The research on double perovskites extends over bulk as well as thin films in order to realize usable multiferroic device elements [1,2,3,4]. In addition to multiferroicity [2], observation of metamagnetic steps in magnetization [5], exchange bias [6], magnetoresistance and magnetocapacitance [7] make these compounds interesting.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, these double perovskites have become one of a group of promising magnetic materials for spin electronics because of their high T c , the value of which is much higher than 300 K, and their tunneling-type magnetoresistancẽ Kobayashi et al, 1998;Fang et al, 2001!. The magnetic structure of A 2 BB ' O 6 is known to originate from the ordered arrangement of parallel Fe 3ϩ~3 d 5 , S ϭ 5/2!…”
Section: Introductionmentioning
confidence: 99%