Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Ritums, M. K.; Stadelmaier, H. H.; Reed, Meredith; Parker, C. A.; Bedair, S. M.; El‐Masry, N. A.

doi:10.1016/s0167-577x(01)00342-1

Cited by 86 publications

(48 citation statements)

References 3 publications

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“…By sharp contrast, in epitaxial GaN layers grown on sapphire substrates and then subjected to solid state diffusion of Mn at temperatures from 250 to 800 8C for various periods, clear signatures of room temperature ferromagnetism were observed [100,101]. Fig.…”

Section: (Ga Mn)nmentioning

confidence: 93%

Advances in wide bandgap materials for semiconductor spintronics

Pearton

Abernathy

Norton

et al. 2003

Materials Science and Engineering: R: Reports

426

198

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Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to control of spin injection, transport and detection leads to the potential for new classes of ultra-low power, high speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical (>300 K) magnetic ordering temperatures. In this paper, we summarize recent progress in dilute magnetic semiconductors (DMS) such as (Ga, Mn)N, (Ga, Mn)P, (Zn, Mn)O and (Zn, Mn)SiGeN 2 exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications in novel devices such as spin-polarized light emitters and spin field effect transistors. #

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Section: (Ga Mn)nmentioning

confidence: 93%

Advances in wide bandgap materials for semiconductor spintronics

Pearton

Abernathy

Norton

et al. 2003

Materials Science and Engineering: R: Reports

426

198

View full text Add to dashboard Cite

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“…(wurtzite) GaNbased DMS can be found in the literature. [12][13][14][15][16][17][18][19] Nevertheless, the results are not conclusive, since a paramagnetic as well as a ferromagnetic behavior has been observed, with a great variation of T C . The very few experimental studies of cubic GaN-based DMS are restricted so far to the investigations of structural and electrical properties of GaMnN layers.…”

mentioning

confidence: 92%

Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions

Chitta

Coaquira

Fernandez

et al. 2004

Applied Physics Letters

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Mn ions were implanted in p-type cubic GaN at doses from 0.6 to 2.4×1016cm−2 at 200 keV energy. A 200-nm-thick epitaxial layer, grown by molecular beam epitaxy on GaAs(001) substrate, is used for the Mn implantation. The Mn implanted samples were subjected to an annealing at 950 °C for 1–5 min. The structural quality of the samples was investigated by high resolution x-ray diffraction and Raman spectroscopy. The annealing procedure leads to a significant increasing of the crystalline quality of the samples. Hysteresis loops were observed for all cubic GaMnN annealed samples and ferromagnetism was detected up to room temperature.

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“…Fe 2+ , Ni 2+ , Mn 2+ , and Co 2+ are commonly used as intentional impurities and incorporated in group II-VI and III-V semiconductors; ZnO, ZnS, ZnSe, CdS, CdSe, and GaN are the frequently used host materials [6][7][8]. However, the magnetic ion concentration in these doped DMS nanocrystals is generally less than 2 mol% [9][10][11][12][13]. It is well known that the magnetic properties of DMSs are strongly dependent on the magnetic ion concentration.…”

Section: Introductionmentioning

confidence: 99%

Dilute Magnetic Semiconductor Cu₂FeSnS₄ Nanocrystals with a Novel Zincblende Structure

Liang

Wei

Pan

2012

Journal of Nanomaterials

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Diluted magnetic semiconductor Cu 2 FeSnS 4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu + , Fe 2+ , and Sn 4+ ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

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Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Cited by 86 publications

References 3 publications

Advances in wide bandgap materials for semiconductor spintronics

Advances in wide bandgap materials for semiconductor spintronics

Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions

Dilute Magnetic Semiconductor Cu₂FeSnS₄ Nanocrystals with a Novel Zincblende Structure

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Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Cited by 86 publications

References 3 publications

Advances in wide bandgap materials for semiconductor spintronics

Advances in wide bandgap materials for semiconductor spintronics

Room temperature ferromagnetism in cubic GaN epilayers implanted with Mn+ ions

Dilute Magnetic Semiconductor Cu2FeSnS4 Nanocrystals with a Novel Zincblende Structure

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Product

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Dilute Magnetic Semiconductor Cu₂FeSnS₄ Nanocrystals with a Novel Zincblende Structure