Room-temperature InAsSb pBin detectors for mid-infrared application

Theoretical design of uncooled mid-infrared PbSe P+pBn+ barrier detectors

“…In addition, compared to uncooled HOT photodetectors, fabricated III-V material (T2SLs, InAsSb) and other PbSe device structures, the PbSe P + pBn + device is more advant ageous and exhibits superior performance highlighted by its low dark current and high detectivity, as shown in figure 9 and supplementary material table S1 [22,55,[58][59][60][61][62]. Furthermore, higher detectivity can be expected by further suppressing the dark current and increasing the quantum efficiency by further optimizing the P + pBn + device design and growth technology of materials, such as decreasing the doping concentration of PbSe absorber [41].…”

Systematic Assessment of Phonon and Optical Characteristics for Gas-Source Molecular Beam Epitaxy-Grown InP1−xSbx/n-InAs Epifilms

“…Antimony (Sb)-based high-electron, high-hole mobility III-V binary (InSb, GaSb, AlSb), ternary (InAlSb, InGaSb, GaAlSb), and quaternary (InGaAlSb, InGaPSb, InAlPSb, GaAlPSb, InGaPSb) alloys and heterostructures (quantum wells (QWs) including superlattices (SLs)) have attracted a great deal of attention due to their promises for developing next-generation high-speed infrared opto-electronic and thermo-electric devices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Among others, the indium-based pnictides (InX; X = P, As, and Sb) have recently gained considerable importance.…”

“…Although the lowest bandgap E g (≡0.18 eV) of InSb material is critical for midinfrared optoelectronics, ultrathin films, QWs, and SLs involving InP (E g ≡ 1.35 eV) and InAs (E g ≡ 0.35 eV) are being used to design metal oxide-semiconductor field-effect transistors (MOSFETs), bipolar junction transistors (BJTs), multi-junction solar cells, light-emitting/ receiving devices, infrared detectors (IDs), Shockley diodes (SDs), long-wavelength laser diodes (LDs), photodetectors (PDs), thermoelectric generators (TEGs), etc. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. According to Talazac et al [17], several Schottky devices have been integrated recently into different ecosystems for detecting radiation, harmful gases, and pollutants (e.g., ozone O 3 , nitrogen oxide NO 3 , etc.)…”

“…There are still a few intrinsic issues that inhibit the design of several important device structures. However, solutions to these problems can be achieved by exploiting appropriate experimental [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] and/or theoretical techniques [18].…”

“…For InP 1−x Sb x alloys, there exist few experimental and theoretical studies, especially on the physics of those attributes which ascertain their prominence at a practical level [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. In the far-infrared (FIR) region, 5 meV ≤ E ≤ 100 meV, although SE is recognized as an efficient method for exploring lattice dynamics and free carrier concentration of binary materials, the method has not yet been applied to ternary alloys.…”