Room temperature hydrogenation of the Si(001)2 × 1 surface studied by angle-resolved electron energy loss spectroscopy

Maruno, Shigemitsu; Iwasaki, Hiroshi; Horioka, Keiji; Li, Sung-Te; Nakamura, Shōgo

doi:10.1016/0039-6028(82)90125-x

Cited by 10 publications

(1 citation statement)

References 12 publications

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“…Stable structures of the H-terminated Si (1 0 0) surface have mainly three mature types [5,6]: H-terminated Si (1 0 0)-(2 × 1), H-terminated Si (1 0 0)-(1 × 1) and H-terminated Si (1 0 0)-(3 × 1), which indicate the monohydride (1 ML), dihydride (2 ML) and an ordered mixture of the monohydride and dihydride (1.33 ML) phases, respectively. Experimental results indicate that H atoms can segregate from the Si (1 0 0) surface when Si adatoms are deposited and diffused on the H-terminated Si (1 0 0) surface [7].…”

Section: Introductionmentioning

confidence: 99%

Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces

Huang¹,

Zhu²

2005

Semicond. Sci. Technol.

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The deposition behaviours of a silicon adatom on H-terminated Si (1 0 0) surfaces have been simulated by the empirical tight-binding (ETB) method. The adsorption energies of a single Si adatom on H-terminated Si (1 0 0) surfaces are specially mapped out in this paper, from which the favourite binding sites and possible diffusion pathways have been found. The energy barriers of the adatom diffusion are found to be higher than that on a clean surface, because the H atoms saturate the dangling bonds of the surface Si atoms. The variation of the diffusion anisotropy with the coverage transformation is also obtained.

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Section: Introductionmentioning

confidence: 99%

Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces

Huang¹,

Zhu²

2005

Semicond. Sci. Technol.

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An energy‐resolved, electron‐stimulated desorption study of hydrogen from cleaned and oxidized Si(100)

Corallo

Hoflund

1988

Surface & Interface Analysis

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Electron-stimulated desorption (ESD) was used to study the hydrogen present on cleaned and oxidized Si(100). Cleaning the surface by ion bombardment and annealing does not completely remove hydrogen from a Si(100) surface. Kinetic energy analysis of the hydrogen ions emitted through ESD shows that multiple states of adsorbed hydrogen are present. Electron beam exposure results in a depopulation of higher energy states. These states are repopulated upon annealing suggesting that the bulk silicon is a source of hydrogen. Oxygen exposure also results in a depopulation of the higher energy desorption states. Angle-resolved, energy-resolved ESD spectra of H + from the cleaned Si(100) surface were also collected. They show that different hydrogen bonding states desorb at different angles relative to the surface plane with differing energy distributions. INTRODUCTIONAn understanding of the interaction between hydrogen and semiconductors has both technological and scientific importance. Hydrogen has been shown to reduce electrical activity in silicon,'-" germanium and gallium arsenide.' 3 -' 7 For example, Benton et al.' achieved hydrogen passivation of electrically active defects created during laser annealing of crystalline silicon by exposure to atomic hydrogen in a hydrogen plasma. Pearton and Tavendale3 showed that both the deep donor and acceptor levels associated with gold are passivated by exposing silicon samples to a hydrogen plasma. Mechanisms responsible for hydrogen passivation in silicon have been proposed by a number of In addition to the interest in the passivation effects of hydrogen, the interaction of hydrogen and silicon has been studied in order to gain a better understanding of the surface geometry of reconstructed clean silicon surface^.^'--^ The ease with which hydrogen induces surface reconstructions on the low-index planes of silicon has been used to evaluate the various models for reconstruction of the clean surface. For example, Nortonz4 found that changes in the diffraction pattern induced by adsorption of hydrogen on Si(OO1) are consistent with the asymmetric dimer model as opposed to the symmetric dimer model. Numerous calculations of surface electronic properties have also been carried out for both clean and hydrogen-exposed silicon surfaces, 2 1 I 2 6-34 and a variety of experimental studies of the silicon/hydrogen system have been performed, 20.2 3,2 5.3 5-60 Th ese studies show that several surface species (including mono-, di-and trihydrides) can exist depending upon sample history and exposure conditions.Relatively few surface analytical techniques detect hydrogen directly due to its light mass, small cross- section for many processes and lack of core-level electrons. However, electron-stimulated desorption (ESD) is highly sensitive to hydrogen because it is a mass spectrometric technique. ESD is powerful in that it can yield information on surface bonding structure and/or mechanisms of excitation and desorption. Few ESD studies of the silicon/hydrogen system have been published. Ma...

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Adsorption of hydrogen atoms on the Si(100)-2×1 surface: implications for the H2 desorption mechanism

Carter

1991

Chemical Physics Letters

131

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Room temperature hydrogenation of the Si(001)2 × 1 surface studied by angle-resolved electron energy loss spectroscopy

Cited by 10 publications

References 12 publications

Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces

Deposition and diffusion of a single Si adatom on H-terminated Si (1 0 0) surfaces

An energy‐resolved, electron‐stimulated desorption study of hydrogen from cleaned and oxidized Si(100)

Adsorption of hydrogen atoms on the Si(100)-2×1 surface: implications for the H2 desorption mechanism

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