Room-temperature green laser emission of Er:LiYF4

Brede, R.; Danger, T.; Heumann, E.; Huber, G.; Chai, B. H. T.

doi:10.1063/1.109942

Cited by 57 publications

(29 citation statements)

References 9 publications

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“…4 I 13/2 at 2.7-2.9 μm [257] and 4 S 3=2 ! 4 I 15/2 at 550 nm [258] has been extensively investigated. In the following sections, progress on EDWLs around 1.5-1.6 μm is surveyed, including the design of on-chip micro-resonators for EDWLs, the various approaches to CW and short-pulse lasers, and their applications.…”

Section: Er-doped Waveguide Lasersmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5-1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul telecommunications networks. At the same time, Er-doped fiber lasers see many applications in telecommunications as well as in biomedical and sensing environments. Over the last 20 years significant efforts have been made to bring these advantages to the chip level. Device integration decreases the overall size and cost and potentially allows for the combination of many functions on a single tiny chip. Besides technological issues connected to the shorter device lengths and correspondingly higher Er concentrations required for high gain, the choice of appropriate host material as well as many design issues come into play in such devices. In this contribution the important developments in the field of Er-doped integrated waveguide amplifiers and lasers are reviewed and current and future potential applications are explored. The vision of integrating such Er-doped gain devices with other, passive materials platforms, such as silicon photonics, is discussed.

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Section: Er-doped Waveguide Lasersmentioning

confidence: 99%

Erbium‐doped integrated waveguide amplifiers and lasers

Bradley

Pollnau

2010

Laser & Photonics Reviews

314

161

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“…Previously, some Er 3+ -doped materials have been reported [1][2][3][4][5][6]. However, owing to the weak absorption of Er 3+ at the pumping wavelength the laser oscillations threshold in Er 3+ -doped materials is generally very high.…”

Section: Introductionmentioning

confidence: 98%

Growth and spectral properties of Er3+/Yb3+-co-doped Ca3Ln2(BO3)4 (Ln=Gd, La) crystals

Wei¹,

Lin²,

Wang³

2006

Journal of Crystal Growth

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“…Especially, with great advances in the development of semiconductor laser diodes in recent years has stimulated researches in the areas of the up-conversion pumped by laser diodes due to the potential applications in numerous photonic devices including three-dimensional displays, high-density optical data reading and storage, up-conversion lasers, infrared laser viewers and indicators [8][9][10][11]. Moreover, the GeO 2 -based systems are photosensitive, which can be employed for the formation of photorefractive Bragg grating [12].…”

Section: Introductionmentioning

confidence: 99%