Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration

Abstract

SUMMARYLow-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (R a : 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (×2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.

Effect of gas injection on cavitation-assisted plasma treatment efficiency of wastewater

“…It is to be noted that no OH radical related peaks were observed in the emission spectra. It is known that the OH related peak appears at a wavelength of 310 nm [21] . Hence, this peak is probably hidden by the broadened continuous spectra as shown in Fig.…”

Wafer-level integration for hybrid chip of infrared detectors

“…To achieve the best bond interface, the Ti/Au was deposited as thin as possible with a sputter. Two substrates were bonded at low temperature after Ar+H2 plasma surface pretreatment before bonding [3]. Lower Au to Au bonding temperatures are advantageous because extreme temperature differences between cryogenic operating temperatures and bonding temperatures can induce significant stresses.…”

Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

“…Au-Au surface activated bonding (SAB) [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] is a promising technique for low-temperature bonding. In Au-Au SAB, the Au surfaces are activated by plasma treatment and then brought into contact at low temperature (<150 • C).…”