Room Temperature Giant and Linear Magnetoresistance in Topological InsulatorBi2Te3Nanosheets

Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a Topological Kondo Insulator

“…Magnetotransport is a helpful way to understand and explore the electronic states in strongly correlated systems and topological insulators [30][31][32]. …”

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi2Te3 Films

“…14,15 In the last few years, the rapid expansion of the emerging field of topological insulators (TIs) has again stimulated intensive research on the MR in these topological materials with non-trivial zero-gap Dirac-like surface states. [16][17][18][19][20][21][22][23][24][25][26] After the initial discovery of a LMR together with the two-dimensional (2D) quantum oscillations of MR from the surface states, 16,17 many further experiments confirmed the existence of LMR in TI materials. [18][19][20][21][22][23][24][25][26] 18,22 Utilizing tilted magnetic field measurement, the linear MR of single crystalline TI in perpendicular field was attributed to the 2D gapless topological surface states and of quantum origin.…”

“…[16][17][18][19][20][21][22][23][24][25][26] After the initial discovery of a LMR together with the two-dimensional (2D) quantum oscillations of MR from the surface states, 16,17 many further experiments confirmed the existence of LMR in TI materials. [18][19][20][21][22][23][24][25][26] 18,22 Utilizing tilted magnetic field measurement, the linear MR of single crystalline TI in perpendicular field was attributed to the 2D gapless topological surface states and of quantum origin. [17][18][19][20] On the other hand, other MR analysis suggested that charge inhomogeneity and conductivity fluctuation are also important, despite the sample being high quality film or individual single crystalline flake.…”

“…[18][19][20][21][22][23][24][25][26] 18,22 Utilizing tilted magnetic field measurement, the linear MR of single crystalline TI in perpendicular field was attributed to the 2D gapless topological surface states and of quantum origin. [17][18][19][20] On the other hand, other MR analysis suggested that charge inhomogeneity and conductivity fluctuation are also important, despite the sample being high quality film or individual single crystalline flake. 21,25,26 For instance, when the transport is tuned from bulk to topological surface conduction by applying back gate, the strong enhancement of linear MR is accompanied by a strongly nonlinear Hall effect, alluding to the relevance of charge inhomogeneity.…”

Oriented attachment of nanoparticles to form micrometer-sized nanosheets/nanobelts by topotactic reaction on rigid/flexible substrates with improved electronic properties

“…It is well known that nonstoichiometric Ag 2 ± δ Te has a potential magnetoresistance (MR) property due to its highly disordered stoichiometry. 40,41 From Figures 7a and b, the Hall voltage sensitivity, ΔV H (T, H)/V H (T, 0), Oriented attachment of nanoparticles H Qian et al of the obtained film to magnetic field H is enhanced up to 188% at room temperature, demonstrating a potential Hall effect sensor application. 42 The Hall resistance varies linearly with the magnetic flux density with a correlation coefficient R of 0.99989.…”