Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi<sub>2</sub>Te<sub>3</sub> Films

Wang, Z. H.; Yang, Lihui; Li, X. J.; Zhao, Xintong; Wang, H. L.; Zhang, Z. D.; Gao, Xuan

doi:10.1021/nl503083q

Cited by 96 publications

(85 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fermi energies close to the Dirac point) as in this regime the resulting magnetoresistance becomes linear. Comparing our findings with experimental results, we note that linear magnetoresistance is very common in measurements on topological surface states [1][2][3][4][5][6][7]. However, distinguishing the described effect from classical magnetoresistance arising from strong inhomogeneity [12,13] may be difficult.…”

Section: Surface Dirac Conessupporting

confidence: 62%

Magnetoresistance from time-reversal symmetry breaking in topological materials

2019

View full text Add to dashboard Cite

Magnetotransport measurements are a popular way of characterizing the electronic structure of topological materials and often the resulting datasets cannot be described by the well-known Drude model due to large, non-parabolic contributions. In this work, we focus on the effects of magnetic fields on topological materials through a Zeeman term included in the model Hamiltonian. To this end, we re-evaluate the simplifications made in the derivations of the Drude model and pinpoint the scattering time and Fermi velocity as Zeeman-term dependent factors in the conductivity tensor. The driving mechanisms here are the aligment of spins along the magnetic field direction, which allows for backscattering, and a significant change to the Fermi velocity by the opening of a hybridization gap. After considering 2D and 3D Dirac states, as well as 2D Rashba surface states and the quasi-2D bulk states of 3D topological insulators, we find that the 2D Dirac states on the surfaces of 3D topological insulators produce magnetoresistance, that is significant enough to be noticable in experiments. As this magnetoresistance effect is strongly dependent on the spin-orbit energy, it can be used as a telltale sign of a Fermi energy located close to the Dirac point.

show abstract

Section: Surface Dirac Conessupporting

confidence: 62%

Magnetoresistance from time-reversal symmetry breaking in topological materials

2019

View full text Add to dashboard Cite

show abstract

“…These phenomena reveal a plethora of information about the intricacies of TI and have been studied in detail. Along with the afore mentioned phenomena a TI also exhibits a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values [16][17][18][19] . Linear MR was first studied by Kapitza in detail in the year 1930 20 .…”

Section: Introductionmentioning

confidence: 99%

Linear magnetoresistance and surface to bulk coupling in topological insulator thin films

Singh¹,

Gopal²,

Sarkar³

et al. 2017

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of BiSeTe and BiSbTeSe were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

show abstract

“…The nonsaturating linear MR and even XMR (10 8 %) have been observed in topological materials as a result of the linear or quasi‐linear dispersion of band structure . Apart from the origin of the intrinsic band structure, granularity and inhomogeneity are also important for the observation of the tunable linear MR …”

Section: Discussionmentioning

confidence: 99%

“…Besides, Heusler‐based TIs may also have superiorities for detecting the magnetic field due to a large nonsaturating linear MR of over 120% (7 T) at room temperature . Apart from the high quality of samples, artificial inhomogeneity and artificial band engineering are also of vital importance for the observation of the linear MR and the tri‐axial MR …”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors

et al. 2018

View full text Add to dashboard Cite

Magnetoresistance (MR) type sensors are transducers that can vary their resistances sensitively in response to an applied magnetic field. Recently, topological quantum materials have drawn the increased attention for sensor applications due to their novel MR effects. Here, a range of MR effects occurring in the layered 3D topological insulators and topological semimetals are briefly reviewed. The MR effects include the extremely large nonsaturating MR, the giant anisotropic MR, and the unique spin‐valve‐like MR. The large MR ratios, the high MR anisotropy, and the low 1/f noise allow sensors to have the high sensitivity over a wide range of temperatures and magnetic fields. It is anticipated that the layered topological quantum materials with their excellent MR performance and structural flexibility would provide an ideal platform for new‐generation magnetic sensor applications.

show abstract

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi₂Te₃ Films

Cited by 96 publications

References 36 publications

Magnetoresistance from time-reversal symmetry breaking in topological materials

Magnetoresistance from time-reversal symmetry breaking in topological materials

Linear magnetoresistance and surface to bulk coupling in topological insulator thin films

Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors

Contact Info

Product

Resources

About

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi2Te3 Films

Cited by 96 publications

References 36 publications

Magnetoresistance from time-reversal symmetry breaking in topological materials

Magnetoresistance from time-reversal symmetry breaking in topological materials

Linear magnetoresistance and surface to bulk coupling in topological insulator thin films

Layered Topological Insulators and Semimetals for Magnetoresistance Type Sensors

Contact Info

Product

Resources

About

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi₂Te₃ Films