Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers

Jiang, Liangbao; Liu, Yu; Si-Bin, Zuo; Wang, Wenjun

doi:10.1088/1674-1056/24/2/027503

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…The slight red shift of E 2 (high), A 1 (TO), and A 1 (LO) of the AlN:Cu NRs relative to those of the undoped AlN NRs is ascribed to the disorder of the crystals resulted from the incorporation of Cu. Similar observation in AlN:Sc six-fold symmetrical hierarchical nanostructures, [27] AlN:Cu whiskers, [195] and GaN:Si NWs [196] are provided in Figure 14(b)-(d).…”

Section: Raman Scatteringsupporting

confidence: 81%

See 1 more Smart Citation

Recent progress in group III-nitride nanostructures: From materials to applications

Chen

Lau

2020

Materials Science and Engineering: R: Reports

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Section: Raman Scatteringsupporting

confidence: 81%

“…AlN:Cu NRs, [193] (b) AlN:Sc six-fold symmetrical hierarchical nanostructures, [27] (c) AlN:Cu whiskers, [195] and (d) GaN:Si NWs. [196]…”

Section: Raman Scatteringmentioning

confidence: 99%

Recent progress in group III-nitride nanostructures: From materials to applications

Chen

Lau

2020

Materials Science and Engineering: R: Reports

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“…Experimental and theoretical studies showed that Cu doped AlN nanorods, films, and powders exhibit room temperature ferromagnetism. [29][30][31][32] In addition, it was predicted experimentally that Zn can be incorporated into an AlN solid solution, [33] and correspondingly, it has been confirmed theoretically that Zn/Cd doping can induce magnetism in an AlN nanosheet. [34] To date, in contrast with the wide study of the electronic structure and magnetic properties of doped monolayer AlN, the effects of group 1A and group 2A dopants in monolayer AlN have not been investigated.…”

Section: Introductionmentioning

confidence: 85%

Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study

Han¹,

Chen²,

Yan³

2017

Chinese Phys. B

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The electronic structure, magnetic properties, and mechanism of magnetization in two-dimensional (2D) aluminum nitride (AlN) monolayer doped with nonmagnetic elements of group 1A (Li, Na, K) or group 2A (Be, Mg, Ca) were systematically investigated using first-principles studies. Numerical results reveal that the total magnetic moments produced by group 1A and group 2A nonmagnetic doping are 2.0µ B and 1.0µ B per supercell, respectively. The local magnetic moments of the three N atoms around the doping atom are the primary moment contributors for all these doped AlN monolayers. The p orbital of the dopant atom contributes little to the total magnetic moment, but it influences adjacent atoms significantly, changing their density of states distribution, which results in hybridization among the p orbitals of the three closest N atoms, giving rise to magnetism. Moreover, the doped AlN monolayer, having half-metal characteristics, is a likely candidate for spintronic applications. When two group 1A or group 2A atoms are inserted, their moments are long-range ferromagnetically coupled. Remarkably, the energy of formation shows that, if the monolayer has been grown under N-rich conditions, substitution of a group 2A atom at an Al site is easier than substitution of a group 1A atom.

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“…[22] Meanwhile, some experimental and theoretical results have also been reported that the Cu-doped AlN films exhibit roomtemperature ferromagnetism. [28][29][30][31][32] On the other hand, compared with conventional transition metal dopants, the nonmagnetic dopants have been a hot topic in recent years due to their high-temperature magnetism, which may be conducive to the mushroom growth of the spin electronics. To date, notwithstanding the magnetism in AlN nanosheets has been widely considered, a detailed understanding of the induced magnetism in Zn/Cd-doped AlN nanosheets has not been performed yet.…”

Section: Introductionmentioning

confidence: 99%

Electronic structures and magnetic properties of Zn- and Cd-doped AlN nanosheets: A first-principles study

Han

Jiang

2017

Chinese Phys. B

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In this paper, the magnetic properties, electronic structures and the stabilities of Zn/Cd incorporated two-dimensional AlN nanosheets are investigated by the first-principles method. Numerical results indicate that Zn and Cd substituting Al atom in AlN nanosheets introduce some holes into the 2p orbitals of the N atoms, and the holes mainly come from spindown 2p orbitals of the N atoms. The magnetic moment of 1.0 µ B is produced by Zn/Cd doping AlN nanosheets, and the main component of the magnetic moment of the system is contributed by the partially filled 2p states of the N atoms around the dopant. In particular, when Zn/Cd substituting Al atoms, the magnetic coupling is found to be ferromagnetic. We attribute the hole-mediated p-d interaction to the created ferromagnetic coupling. More importantly, the result of formation energy indicates that Al atom is more inclined to be replaced by Zn atom rather than Cd. This finding is beneficial to developing the spin electronic devices.

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Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers

Cited by 6 publications

References 29 publications

Recent progress in group III-nitride nanostructures: From materials to applications

Recent progress in group III-nitride nanostructures: From materials to applications

Magnetic properties of AlN monolayer doped with group 1A or 2A nonmagnetic element: First-principles study

Electronic structures and magnetic properties of Zn- and Cd-doped AlN nanosheets: A first-principles study

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