Recent progress in group III-nitride nanostructures: From materials to applications

Chen, Fei; Ji, Xiaohong; Lau, Shu Ping

doi:10.1016/j.mser.2020.100578

Cited by 78 publications

(57 citation statements)

References 445 publications

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“…Furthermore, challenges associated with the incorporation of high indium content precludes the realization of high-performing nitride emitters in the long-wavelength region. It is expected that many of these challenges can be appreciably overcome by employing nitride nanostructures, such as nanowires, nanorods, disk-/dot-in-nanowires, and self-organized quantum dots [269][270][271]. Among these nanostructures, III-nitride nanowires are considered to be one of the most promising candidates for realizing the next generation of nitride emitters.…”

Section: Nanostructured Nitride Emittersmentioning

confidence: 99%

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III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nanostructured Nitride Emittersmentioning

confidence: 99%

“…The non-radiative recombination associated with surface states of these nanowires also needs to be mitigated to enhance the output power and efficiency of these devices. More detailed reviews of III-nitride nanowire-based LEDs and lasers are available in [269][270][271].…”

Section: Nanostructured Nitride Emittersmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…By virtue of their wide bandgap range, suitable surface-recombination velocity, and large exciton binding energies (typically 60 meV for AlN and 26 meV for GaN), the III-nitrides are potent competitors in the laser field [ 145 ]. In recent years, three-dimensional (3D) III-nitride quantum-confined nanowire lasers have attracted wide interest as alternatives to traditional planar lasers, which always possess high threshold current densities (several kA/cm 2 for GaN-based devices).…”

Section: Applications Of (In)gan Nanostructuresmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

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This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

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“…Materials used in space applications are required to be resistant to high radiation, and the InGaN material has been proven in this research (Zhang et al 2013) that its high radiation resistance can be used in space applications. Nowadays, many important InGaN-based devices such as field emitters (Chen et al 2020a), multicolor display (Evropeitsev et al 2020), and intermediate band solar cell (Cheriton et al 2020) are produced. Studies (Yang et al 2017) in the literature have shown us that the electrical, optical and structural parameters of the InGaN material limit the efficiency of the material for many key parameters such as electron mobility (Gökden et al 2010) and photon absorption (Liu et al 2017).…”

Section: Introductionmentioning

confidence: 99%

Comparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow cases

Mantarcı

2021

Opt Quant Electron

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InGaN films in the non-flow and a small flow of nitrogen cases were fabricated by the RFMS (Radio Frequency Magnetron Sputter) method to compare crucial physical characteristics of its material. From the XRD analysis, application of small nitrogen flow in InGaN thin film growth has been observed to result in changes in the crystal size, texture coefficient, and crystal structure parameters of the film. AFM results showed both films obtained have tightly packed granular, and almost homogeneous, and Nano-structural properties, but they are different in roughness, as increased by applying small nitrogen flow. Optical conductance peaks of the material in non-flow and small flow case were 1.3957 × 10 10 and 1.1496 × 10 10 (S/m), showed a decrement in optical conductance by small nitrogen flow. In the same manner, electrical conductance peaks of the material in non-flow and small flow case were 5.2512 × 10 12 and 5.2236 × 10 12 (S), showed a decrement in electrical conductance by small nitrogen flow. In addition, the electrical conductivity of the InGaN material has been obtained at higher than the optical conductivity value of the InGaN material in both cases. Also, it was noticed that direct allowed optical band gap energy non-flow and small flow cases were 2.4701 and 2.5225 eV, displayed increased by applied small nitrogen flow. Essentially, many noteworthy physical properties such as crystalline size, texture coefficient, optical/electrical conductivity, the surface roughness of the films have been compared and studied for the non-flow and a small flow of nitrogen cases.

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Recent progress in group III-nitride nanostructures: From materials to applications

Cited by 78 publications

References 445 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Comparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow cases

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