In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Abstract

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.

Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices

“…Hence, we are confident that LDA+U with the optimized Us is an attractive approach offering performance similar to that of HSE06 at a tiny fraction of its cost when computing band gaps and E-fields of InGaN superlattices, e.g., in digital alloys [15]. This performance gain might prove helpful when studying, engineering, and optimizing the electronic properties of InGaN nanostructures for light-emitting diodes [52][53][54], gas sensing [55], electrochemical devices [56], solar energy harvesting, and conversion [57][58][59][60], such as InGaN nanowires, core-shell structures, and quantum dots.…”

Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors

“…Soopy et al 157 compiled a review of the applications of GaN and In(Ga)N structures fabricated by photo-induced MacEtch. Many structures not fabricated by MacEtch are covered within Soopy, 157 but the discussion may be relevant to those interested in MacEtch and associated applications.…”

GaN nanowires prepared by Cu-assisted photoelectron-chemical etching

“…The two methods are both expensive and complicated to some degree 8,9 . Thus, wet etching has demonstrated significant potential to realize GaN nanowires, owing to the simple experimental operation, low etching-induced damage, and material stress relief 10,11 .…”

“…8,9 Thus, wet etching has been demonstrated to have signicant potential to realize GaN nanowires owing to the simple experimental operation, low etching-induced damage, and material stress relief. 10,11 Currently, metal-assisted chemical wet etching (MACE) has been a terric and mature method to synthesize Si/GaAs nanowires. [12][13][14] However, the MACE of GaN nanowires is yet to be explored further.…”