Room-temperature ferromagnetism in Mn-doped CdGeAs2 chalcopyrite

Growth and magnetic properties of Mn‐doped ZnSiAs2/Si heterostructures

“…In our case, µ exceeds the magnetic moment of Mn 2+ ion (5 µ B) when substituting the Zn or Si site. The same situation was observed for the Mn-doped CdGeAs 2 bulk crystal, where the mean magnetic moment was µ = 7.1-8.0µ B [7].…”

“…The theoretical calculations [4] and experimental observations of room-temperature ferromagnetism in II-IV-V 2 semiconductors doped with Mn [5][6][7][8][9] with T C up to 367 K in ZnGeAs 2 [9] have encouraged interest in growth and investigation of new magnetic II-IV-V 2 materials.…”

Changes in the magnetization hysteresis direction and structure-driven magnetoresistance of a chalcopyrite-based magnetic semiconductor

“…The family of Mn-doped II-IV-V 2 semiconductors have attracted considerable attention both experimentally [5][6][7] and theoretically [8,9] due to room-temperature (RT) ferromagnetism which holds potential in the modern concept of spin devices. Although the scientific interest devoted to these materials is smaller than that of III-V diluted magnetic semiconductors (DMS) [10], interest in these compounds has been resurrected due to the unusual properties of their magnetic inhomogeneities such as recent demonstrations of metamagnetic-like behavior under pressure, as well as the path to pressure controlled response of magnetic clusters at RT [11,12].…”

Preparation and crystal structure characterization of CuNiGaSe3 and CuNiInSe3 quaternary compounds

“…TransitionMetal (TM) doping of semiconductors has attracted increasing interest since the discovery of ferromagnetism persisting up to relative high temperatures in the prototype Mn-doped GaAs (Dielt et al 2000(Dielt et al , 2001. Recently, attention has been focused on chalcopyrite alloys (Medvedkin et al 2000;Cho et al 2002;Freeman and Zhao 2003;Demin et al 2004Demin et al , 2005Sarkisov and Picozzi 2007) due to their presumed ferromagnetism persisting up to room temperature. Although precise calculations demonstrate that: (a) the magnetic moments may be tuned with impurities and (b) the Curie temperature is proportional to hole concentration, the origin of the ferromagnetism in these magnetic semiconductors is still under intense discussion.…”