Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications

Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices

“…It is also notable that the set and reset voltages in present Ti/CeO 2Àx :CeO 2 /ITO devices are found to be smaller than those of our already reported ITO/CeO 2 /ITO [Ref. 23] and Zr/CeO x /Pt devices [Ref. 19].…”

“…Moreover, the abrupt RESET transition instead of multistep decreasing current behavior indicates that the underlying mechanism of RESET steps in the present device is analogous to that of ITO/CeO 2 / ITO devices reported in Ref. 23 but somewhat different from that of Zr/CeO x /Pt devices reported in Ref. 19.…”

“…The positive bias applied to Ti top electrode repels oxygen vacancies into the CeO 2 layer, which may lead to the formation of conductive paths between the electrodes switching the device into ON-state. Our earlier study reported ITO/CeO 2 /ITO devices required electroforming voltages higher than 5 V. 23 But due to the use of Ti top electrode and bilayer structure of the active oxide, a reduction in the forming voltage is noticed. Such low value of electroforming voltage ($2 V) may be associated with the presence of relatively large number of oxygen vacancies in the CeO 2Àx layer.…”

“…Such behavior might have originated from nano-morphological variations in both ceria layers caused by different oxygen vacancy densities. 23,24 Moreover, bottom ITO electrode is incapable to provide sufficient number of electrons to overcome the traps/defects in the active ceria layers and take part in the conduction mechanism.…”

High performance sol–gel synthesized Ce0.9Sr0.1(Zr0.53Ti0.47)O4sensing membrane for a solid-state pH sensor

“…The accumulated charges at the surface of the gate oxide lm that arise from the electrolyte solution cannot be passed through the lm, thus leading to the change in the channel conductance and current modulation. [13][14][15] However, moisture absorption is a major issue when RE oxides are used as gate dielectrics in CMOS devices, which degrades their electrical performance due to the formation of hydroxides. 16 To avoid the unwanted hydroxide lm, the Zr/Ti ratio of 0.53/0.47 was previously successfully adopted in a sensing lm by our group.…”