Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions

Liu, Q. Z.; Lau, S. S.; Perkins, Nathan; Kuech, T. F.

doi:10.1063/1.118009

Cited by 29 publications

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“…Their results were inconsistent. In some reports, palladium uniformly covered the surface and grew epitaxially [14,15]; in others, the Pd films had grainy structure [16]. Some results showed 3D palladium nanoislands as well as surface and bulk alloys formed after annealing [17,18]; other research excluded the formation of alloys or interfacial compounds [19].…”

Section: Introductionmentioning

confidence: 93%

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

et al. 2015

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Palladium was deposited gradually under ultrahigh vacuum onto a well-defined surface of (0001)-oriented n-type GaN, at room temperature. Each deposition step was followed by annealing. Physicochemical properties of the Pd adlayers were in situ investigated prior to and after annealing by the X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, low-energy electron diffraction, scanning tunneling microscopy and atomic force microscopy techniques. Annealing resulted in the formation of GaPd 2 and GaPd intermetallic compounds at 550°C and at 800°C. Even for thicker layers, the compounds were strongly dispersed, forming 3D nanostructures. The substrate uncovered by the compounds revealed Ga-rich GaN(0001)-(1 9 1) surface. Formation of Ga-Pd-N bonds or Pd nitrides was not detected at the surface. The Ga-Pd intermetallic compound surface engineered on the GaN(0001) substrate can be used as the strongly dispersed catalyst or a model catalyst.

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Section: Introductionmentioning

confidence: 93%

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

et al. 2015

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“…16 For other metal films, such as Pd, on GaN ͑0001͒, however, a channeling yield as low 16% has been observed. 12 Since RHEED patterns and x-ray thin-film camera results indicated that Al overgrowth was of good crystalline quality and the RHEED patterns showed that ͗110͘ GaN ʈ͗211͘ Al and ͗1100͘ GaN ʈ͗011͘ Al , we may conclude that a definite crystallographic relationship between the Al overlayer and the GaN substrates exists, i.e., Al is ''epitaxial'' on GaN and not merely highly textured.…”

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confidence: 95%

“…11 Recently, we have found that Pd, Ni, and Pt can be grown epitaxially on GaN in a conventional e-beam evaporation system without in situ cleaning in UHV. 12 Other metals, such as Au, Al, Ti, and Hf, have also been found to grow epitaxially on GaN under conventional vacuum conditions. 13 These findings suggest that after the GaN surface has been cleaned by acid etching, the presence of oxides on GaN surfaces is minimal and, furthermore, that native oxides do not grow rapidly on the GaN surface during the time ͑Ͻ30 min͒ required to load the samples in the vacuum deposition chamber.…”

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confidence: 98%

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Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

Liu

Shen

Smith

et al. 1997

Applied Physics Letters

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Articles you may be interested inEpitaxial growth by pulsed laser deposition of Er-doped Sc 2 O 3 films on sesquioxides monitored in situ by reflection high energy electron diffraction Appl. Phys. Lett. 91, 083103 (2007); 10.1063/1.2773750 High-quality thin single-crystal γ -Al 2 O 3 films grown on Si (111) Appl. Phys. Lett. 87, 091908 (2005); 10.1063/1.2037205 Observation of reflection high-energy electron diffraction oscillation during metalorganic-molecular-beam epitaxy of AlAs and control of carbon incorporation J. Appl. Phys. 94, 4871 (2003); 10.1063/1.1606515Homoepitaxial diamond (001) thin film studied by reflection high-energy electron diffraction, contact atomic force microscopy, and scanning tunneling microscopy A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP Appl. Phys. Lett. 72, 954 (1998);

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“…Palladium is capable of forming low resistance contacts to p-GaN (and good Schottky contacts to n-GaN), provided that the wafer surface has been cleaned properly [4][5][6][7][8]. Under certain conditions, the palladium may deposit epitaxially in an electron beam evaporator [9]. The silver serves as a good reflector, and the nickel and gold have been added for wirebonding purposes.…”

Section: Device Designmentioning

confidence: 99%

Fabrication of GaN-Based Resonant Cavity LEDs

Maaskant

Akhter

Roycroft

et al. 2002

phys. stat. sol. (a)

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This article describes a fabrication process for GaN based resonant cavity (RC) LEDs. The devices emit through the transparent sapphire substrate. An AlGaN/GaN DBR forms the bottom mirror, while a PdAg‐based p‐contact metallisation serves as top mirror. The PdAg mirrors have been characterized optically by reflectometry, and electrically by circular TLM measurements. A specific contact resistivity of 1.0 × 10—2 Ωcm2 has been measured, without any annealing of the contacts. For the GaN to PdAg interface a reflectivity of 60% has been measured for a wavelength of 510 nm. At 20 mA bias the RC‐LEDs show a forward voltage of 3.5 V and an optical output of 330 μW through the back of the wafer.

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Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions

Cited by 29 publications

References 0 publications

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy

Fabrication of GaN-Based Resonant Cavity LEDs

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