Self-aligned silicidation is a well-known process to reduce source, drain, and gate resistances of submicron metal-oxide-semiconductor devices. This process is particularly useful for devices built on very thin Si layers (∼1000 Å or less) on insulators because of the large source and drain resistances associated with the thin Si layer. NiSi is a good candidate for salicidation process due to its low resistivity, low formation temperature, little silicon consumption, and large stable processing temperature window. In this article, the formation of nickel mono-silicide (NiSi) using rapid thermal annealing, the thermal stability of NiSi on n+ poly-Si and the contact resistance of NiSi on n+ Si layers in a SIMOX structure were investigated. NiSi salicidation process was, then, incorporated into a NMOS/SIMOX device fabrication for partial and full consumption of the Si in the source and drain regions during the salicidation process. The effects of void formation and silicide encroachment on the device performance were also studied.

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Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film J. Appl. Phys. 112, 073101 (2012) Control of normal and abnormal bipolar resistive switching by interface junction on In/Nb:SrTiO3 interface Appl. Phys. Lett. 101, 133506 (2012) Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices J. Appl. Phys. 112, 063714 (2012) Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistorsThe formation mechanism of the ohmic Au/Ni/p-GaN contact has been investigated. We found that it is essential to ͑i͒ deposit a structure of Au and Ni in the proper deposition sequence, and ͑ii͒ anneal the bilayer structure in an oxygen containing ambient. Our findings indicated that oxygen assists the layer-reversal reactions of the metallized layers to form a structure of NiO/Au/p-GaN.

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The ohmic contact formation of Al/Ti on AlGaN/GaN heterostructure field effect transistors (HFETs) with and without Si implantation was investigated. Direct implantation and implantation through an AlN capping layer were studied. Compared to implantation through AlN, direct implantation is more effective in reducing the contact resistance. An Al(200 Å)/Ti(1500 Å) bilayer structure, called the “advancing” metallization, was used in this investigation to take advantage of consuming nearly all the top AlGaN layers for easy carrier access to the GaN layer underneath. Combining the direct implantation and the advancing metallization, low contact resistance of the order of 0.25 Ω mm (∼5.6×10−6 Ω cm2) can be readily obtained on HFET structures with an AlGaN layer about 340 Å thick and with an Al fraction of at least 22%.