Room temperature electroluminescence of nanofabricated Si–Si1−xGexquantum dot diodes

Tang, Youxi; Torres, C. M. Sotomayor; Ni, Wei‐Xin; Hansson, G. V.

doi:10.1006/spmi.1996.0108

Cited by 21 publications

(12 citation statements)

References 13 publications

(18 reference statements)

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“…For example, room-temperature visible photoluminescence (PL) has been observed from porous Si [1] and strong infrared PL from various island or quantum dot systems [2][3][4][5][6][7][8][9]. A particular focus has been the study of self-organized structures containing nanometer sized Si and Ge crystals [10] which being compatible with present Si technology have important capabilities for device engineering.…”

Section: Introductionmentioning

confidence: 98%

Photoluminescence of Ge nanocrystals self-assembled on SiO2

Rowell

Lockwood

Karmous

et al. 2008

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 98%

Photoluminescence of Ge nanocrystals self-assembled on SiO2

Rowell

Lockwood

Karmous

et al. 2008

Superlattices and Microstructures

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“…For example, room-temperature visible photoluminescence (PL) has been observed from porous Si (1) and strong infrared PL from various island or quantum dot systems (2)(3)(4)(5)(6)(7)(8)(9). A particular focus has been the study of self-organized structures containing nanometer sized Si and Ge crystals (10), which being compatible with present Si technology have important capabilities for device engineering.…”

Section: Introductionmentioning

confidence: 98%

(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

et al. 2013

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Self-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy either on a thin porous TiO 2 layer grown on SiO 2 on Si(001) or directly on the SiO 2 layer itself. For samples with dot diameters ranging from 10 to 35 nm, the dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. The peak energy of the PL band reflects the average dot size and its shape depends on the dot size distribution. Using tight binding and effective mass theoretical models, we have analyzed the PL spectrum in terms of the dot size distribution. The observed size distribution determined from transmission electron and atomic force microscopy allowed the determination of the nonlinear increase in the PL efficiency with decreasing dot diameter. Although the absolute intensities of the PL from the samples vary, the calculated efficiency curves are all well fitted by straight lines on a log-log plot, with essentially the same slope for all samples, thereby demonstrating that under the weak confinement regime investigated here there is a universal power-law increase in PL efficiency with decreasing dot size. Knowing this generic PL efficiency, we show that it is possible to evaluate the size distribution of Ge dots from their PL energy dependence.

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“…Although achieving efficient light emission from group IV semiconducting materials, a subject of intense research activity, has proven elusive, carrier localization methods have led to significantly enhanced optical emission from indirect gap materials and, notably, at higher temperatures. For example, room-temperature visible photoluminescence (PL) has been observed from porous Si (1) and strong infrared PL from various island or quantum dot systems (2)(3)(4)(5)(6)(7)(8)(9). A particular focus has been the study of self-organized structures containing nanometer sized Si (10) and Ge crystals (11), which being compatible with present Si technology have important capabilities for device engineering.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Emission from Strained Germanium Nanocrystals

Rowell

Lockwood²

2018

ECS Trans.

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We analyse the intense photoluminescence (PL) observed at energies from 600 to 1500 meV for many molecular beam epitaxy grown Si 1-x Ge x epitaxial layers. We show that the unexplained broad PL peak is due to self-assembled Ge nanocrystals (NCs) within the SiGe layers. The NCs are assumed lattice matched to the SiGe in the vertical, growth direction. As the Ge-fraction in the SiGe layer increases, the vertical strain in the NCs changes from compressive to tensile at x ~ 0.36, lowering the NC band gap (BG) below that of bulk Ge. We analyse PL results for 64 samples exhibiting this broad PL peak by examining how it follows the strained Ge BG for x from 0.05 to 0.53. The PL is resolvable as two narrower peaks separated by the TO phonon energy for Ge. Strain and confinement shifted NC bound exciton energies calculated numerically agree well with the measured ones.

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Room temperature electroluminescence of nanofabricated Si–Si1−xGexquantum dot diodes

Cited by 21 publications

References 13 publications

Photoluminescence of Ge nanocrystals self-assembled on SiO2

Photoluminescence of Ge nanocrystals self-assembled on SiO2

(Invited) Photoluminescence Efficiency of Germanium Dots Self-Assembled on Oxides

(Invited) Emission from Strained Germanium Nanocrystals

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