Superlattices and Microstructures volume 44, issue 4-5, P305-314 2008 DOI: 10.1016/j.spmi.2008.01.011 View full text
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N.L. Rowell, D.J. Lockwood, A. Karmous, P.D. Szkutnik, I. Berbezier, A. Ronda

Abstract: Ge nanocrystals have been obtained from the dewetting process during thermal annealing of an amorphous Ge layer deposited by molecular beam epitaxy on a thin SiO 2 layer on Si(001). The Ge nanocrystals were then capped with a thin layer of amorphous Si. The mean nanocrystal size -2.5-60 nm -depends on the initial Ge layer thickness. Low-temperature photoluminescence (PL) measurements were performed to investigate quantum confinement effects on the Ge nanocrystal energy gap and defect states. For the present r…

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