Room-temperature electroluminescence from Si/Ge/Si1−<i>x</i>Ge<i>x</i> quantum-well diodes grown by molecular-beam epitaxy

Presting, H.; Zinke, T.; Splett, A.; Kibbel, H.; Jaroš, M.

doi:10.1063/1.117642

Cited by 45 publications

(17 citation statements)

References 2 publications

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“…The device performances such as threshold current density, external quantum efficiency, optical confinement, carrier confinement, thermal sensitivity, and the absorption region are all crucially dependent on the thicknesses and/or energy band gap of the pseudo substrate layer Si 0.75 Ge 0.25 for both single and multiple quantum well photodetectors [14]. There have been few reported results showing the contribution of the pseudo substrate layer to the photodetectors [36,37]. From these results, one can speculate that the pseudo substrate layer with an advanced band discontinuity provides a barrier height to prevent the carriers from surmounting it and reduces the leakage current.…”

Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 -1.55 μm. The electron transport in the Si/Si 1−x Ge x /Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrödinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (R 0 A) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.

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Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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“…There has been a continual improvement in materials quality and this, coupled with changes in device design, has continued to advance EL device performance [see, for example, Fukatsu et al (1992), Mi et al (1992), Kato et al (1995), Förster et al (1996), and Presting et al (1996)] to the point that EL has been obtained at wavelengths near 1.3 μm at room temperature (Mi et al, 1992;Presting et al, 1996). From a practical point of view, one major problem with such devices at present is their low efficiency at room temperature, which results from thermal dissociation of the exciton (Mi et al, 1992;Presting et al, 1996). For example, Si1−xGex/Si p-i-n diodes that had been grown on patterned substrates to optimize the unrelaxed alloy layer thickness had an EL internal quantum efficiency of only ~10 −4 at 300 K .…”

Section: Band Structure Engineering Via Alloyingmentioning

confidence: 99%

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Lockwood

Baribeau

et al. 2016

Front. Mater.

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Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1−xGex nanostructures (NSs), which can emit light at wavelengths within the important optical communication wavelength range of 1.3-1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1−xGex NSs have prevented the attainment of efficient light-emitting devices, including the desired lasers. Thus, the engineering of Si/ Si1−xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range of 0.8-0.9 eV. In this paper, we assess how the nature of the interfaces between SiGe NSs and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors, such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for NS confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/ Ge NW diameter in the range 50-120 nm produce a clear PL signal associated with bandto-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1−xGex NSs incorporated into a Si0.6Ge0.4 wavy superlattice structure display PL of high intensity while exhibiting a characteristic decay time that is up to 1000 times shorter than that found in conventional Si/SiGe NSs. The non-exponential PL decay found experimentally in Si/SiGe NSs can be interpreted as resulting from variations in the separation distance between electrons and holes at the Si/SiGe heterointerface. The results demonstrate that a sharp Si/SiGe heterointerface acts to reduce the carrier radiative recombination lifetime and increase the PL quantum efficiency, which makes these SiGe NSs favorable candidates for future light-emitting device applications in CMOS technology.

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“…Since there are big problems of diffusion and doping for the growth of III-V materials on Si, SiGe is more favorable for application purpose. Previously, Si 1-x Ge x bulk material, SiGe/Si quantum wells and SiGe strained layer superlattice (SLS) have been widely exploited for the 1.3 µm detectors [13][14][15][16] . The strain between Si and Ge is a serious obstacle in obtaining high quality material.…”

Section: Introductionmentioning

confidence: 99%

Normal-incidence near-1.55-μm Ge quantum dot photodetectors on Si substrate

et al. 2001

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The development of Si-based photodetectors is very important due to their compatibility with the state-of-the-art Si planar technology. Photodetectors based on Ge quantum dots were studied. Three p-i-n structures containing Ge dots were grown by molecular beam epitaxy in Stranski-Krastanov mode. The dots were grown embedded in Si spacing layers on Si (100) substrates. The nominal Ge growth thickness in each layer was 1.2, 1.5 and 1.8 nm for the three samples, respectively. Photoluminescence measurement showed that the Ge dot related peak shift to lower energy with increasing the dot layer thickness. The materials were processed into p-i-n photodiodes with conventional processing methods. I-V measurement showed a low dark current density of 3x10 -5 A/cm 2 at -1 V. A strong photoresponse at 1.3-1.55 µm originating from Ge dots was observed. The response peak shifts with the Ge growth thickness. At normal incidence, an external quantum efficiency of 8% was achieved at 2.5 V. The dot layers were considered to trap the light in the intrinsic region, and thus increase the absorption.

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Room-temperature electroluminescence from Si/Ge/Si1−xGex quantum-well diodes grown by molecular-beam epitaxy

Cited by 45 publications

References 2 publications

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

Normal-incidence near-1.55-μm Ge quantum dot photodetectors on Si substrate

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