Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina, N.; Yahyaoui, N.; Saïd, M.; Lazzari, J.–L.

doi:10.4236/mnsms.2014.41007

Cited by 4 publications

(3 citation statements)

References 35 publications

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“…Thus there must be a tradeoff in between the higher responsivity and smaller tunnel current which can be optimized by varying the quantum well length and this may be the inspiration of further work. The tunnel current density of the SQW heterostructure p-n diode is found to be almost in the same order of Si 0.75 Ge 0.25 /Si/Si 0.4 Ge 0.6 /Si/Si 0.75 Ge 0.25 multiple quantum well (MQW) p-i-n photo diode for the same reverse bias voltage range (0.5-1.0 V) reported by Sfina et al [44] in the year 2014. Fig.…”

Section: Numerical Results and Discussionsupporting

confidence: 58%

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Acharyya¹,

Chatterjee²,

Das³

et al. 2014

J Comput Electron

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In this paper, the quantum mechanical behavior of a reverse biased nano-scale p-n junction based on Si/Si 0.4 Ge 0.6 /Si quantum well has been studied by obtaining the self-consistent solution of coupled Schrödinger and Poisson equations. The carrier confinement within the said quantum well structure has been investigated by analyzing the special variations of electron and hole densities throughout the device structure obtained from the self-consistent solution of coupled Schrödinger and Poisson equations for different widths of the quantum well. The tunnel current across the junction has also been calculated for the heterostructure for different applied reverse bias voltages. Results show that, due to the greater depth of the quantum well in conduction band as compared to that in valance band of Si/Si 0.4 Ge 0.6 /Si heterostructure, the quantum confinement effect is more pronounced for electrons in conduction band as compared to that for holes in valance band. Finally the current-voltage characteristics of the heterostructure under consideration have been investigated for different widths of the quantum well. It is observed that the modulation of tunnel current may be achieved by varying the width of the quantum well. The present study is the groundwork for investigating the optoelectronic properties of nano-scale photodetectors based on Si/Si 1−x Ge x /Si material system capable of detecting longer wavelengths around 1.30 and 1.55 μm.

show abstract

Section: Numerical Results and Discussionsupporting

confidence: 58%

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Acharyya¹,

Chatterjee²,

Das³

et al. 2014

J Comput Electron

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“…The flattened dark J−V curves imply that the tunneling current between the interlayer and the active layer was dramatically suppressed, 37 and it is widely known that the main source of the tunneling current is the surface traps. 38 Therefore, the insertion of CPEs resulted in not only decreasing the WF but also suppressing the tunneling-induced dark current.…”

Section: Acs Photonicsmentioning

confidence: 99%

Development of Novel Conjugated Polyelectrolytes as Water-Processable Interlayer Materials for High-Performance Organic Photodiodes

Yoon

et al. 2017

ACS Photonics

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A series of novel conjugated polyelectrolytes composed of two different building blocks with different composition ratios were designed and synthesized for application as a functional layer in high-performance organic photodiodes (OPDs). A homopolymer and two random copolymers were prepared using different molar ratios of dibromo 1,4-bis(4sulfonatobutoxy)benzene (SPh) and dibromo 1,4-bis(4-tetraethylene glycol)benzene (EGPh): EG20 with SPh:EGPh ratio of 0.8:0.2 and EG40 with a ratio of 0.6:0.4. Structural analyses by two-dimensional grazing-incidence X-ray diffraction and near-edge X-ray absorption fine structure spectroscopy studies proved that a higher EGPh content could induce more organized polymer chains with face-on orientation of EG20 and EG40. Such an orientation of EG20 and EG40 along with the ordered crystalline organization yielded effective molecular dipole moments in the thin films when applied as an interlayer between ZnO and an active layer of inverted OPDs. As confirmed by ultraviolet photoelectron spectroscopy, the increase in EG content gradually shifted the workfunction of the ZnO, facilitating the inverted OPD to simultaneously achieve a decrease in dark current and enhancement in photocurrent. The synergetic effects introduced by the newly designed EG20 and EG40 resulted in significantly improved OPD performances with high specific detectivity up to 2.1 × 10 13 Jones, 3 dB bandwidth of 72 kHz, and linear dynamic range of 110 dB.

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“…Using the same linear development for all derivative terms of the conduction and diffusion currents given in second part of equation ( 13), by comparing with those extracted from equation ( 13), one can find [34]:…”

Section: Studied Structure and Modelingmentioning

confidence: 99%

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge_0.964Sn_0.036/Ge multiple quantum wells by quantum modelling

Yahyaoui

Sfina

Lazzari

et al. 2015

Semicond. Sci. Technol.

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GeSn/Ge p-i-n photodetectors with practical Ge 0.964 Sn 0.036 active layers are theoretically investigated. First, we calculated the electronic band parameters for the heterointerfaces between strained Ge 1−x Sn x and relaxed (001)-oriented Ge. The carrier transport in a p-i-n photodiode built on a ten-period Ge 0.964 Sn 0.036 /Ge multiple quantum well absorber was then analyzed and numerically simulated within the Tsu−Esaki formalism by self-consistently solving the Schrödinger and Poisson equations, coupled to the kinetic rate equations. Photodetection up to a 2.1 μm cut-off wavelength is achieved. High responsivities of 0.62 A W −1 and 0.71 A W −1 were obtained under a reverse bias voltage of −3 V at peak wavelengths of 1550 nm and 1781 nm, respectively. Even for this low Sn-fraction, it is found that the photodetector quantum efficiency (49%@1.55 μm) is higher than those of comparable pure-Ge devices at room temperature. Detectivity of 3.8 × 10 10 cm Hz 1/2 W −1 and 7.9 × 10 10 cm Hz 1/2 W −1 at −1 V and −0.5 V, respectively, is achievable at room temperature for a 1550 nm wavelength peak of responsivity. This work represents a step forward in developing GeSn/Ge based infrared photodetectors.

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Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Cited by 4 publications

References 35 publications

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Development of Novel Conjugated Polyelectrolytes as Water-Processable Interlayer Materials for High-Performance Organic Photodiodes

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge_0.964Sn_0.036/Ge multiple quantum wells by quantum modelling

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Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Cited by 4 publications

References 35 publications

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

Development of Novel Conjugated Polyelectrolytes as Water-Processable Interlayer Materials for High-Performance Organic Photodiodes

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling

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Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge_0.964Sn_0.036/Ge multiple quantum wells by quantum modelling