2005
DOI: 10.1080/14786430412331315680
|View full text |Cite
|
Sign up to set email alerts
|

Room temperature dislocation plasticity in silicon

Abstract: We present direct observations of room temperature dislocation plasticity in single crystalline silicon. Previous studies have shown that phase transformation and fracture are the relevant mechanisms of deformation in silicon. In contrast, using in-situ nanoindentation in a transmission electron microscope we find dislocation nucleation and metal-like flow. The results of finite-element modelling suggest that the presence of free surfaces in our unique sample geometry leads to preferential surface nucleation o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

5
56
1

Year Published

2007
2007
2021
2021

Publication Types

Select...
7
1
1

Relationship

0
9

Authors

Journals

citations
Cited by 129 publications
(62 citation statements)
references
References 27 publications
5
56
1
Order By: Relevance
“…Upon removal of the load, the dislocations are 'frozen' into the structure, and are thus readily observable. Additionally, there has been no direct evidence to date (e.g., from TEM imaging) where dislocations have been seen at arrested crack tips in silicon; roomtemperature dislocation plasticity in silicon has only been observed to date during the high combined compressive and shear loads of an indentation test [38] . Their third possible mechanism involved grain-boundary plasticity, where an amorphous grain-boundary region hitting the surface under stress would experience a non-conventional plastic deformation in shear, which would then cause a residual compressive stress, possibly resulting in the observed strengthening effect.…”
Section: Figurementioning
confidence: 99%
“…Upon removal of the load, the dislocations are 'frozen' into the structure, and are thus readily observable. Additionally, there has been no direct evidence to date (e.g., from TEM imaging) where dislocations have been seen at arrested crack tips in silicon; roomtemperature dislocation plasticity in silicon has only been observed to date during the high combined compressive and shear loads of an indentation test [38] . Their third possible mechanism involved grain-boundary plasticity, where an amorphous grain-boundary region hitting the surface under stress would experience a non-conventional plastic deformation in shear, which would then cause a residual compressive stress, possibly resulting in the observed strengthening effect.…”
Section: Figurementioning
confidence: 99%
“…In this regard, the existing research details several aspects of silicon, but this material is so versatile that many new phenomena are still being explored to bridge the missing gaps in our existing understanding. Across a number of those research studies, ductility in silicon by large has been attributed either to the occurrence of high pressure phase transformation (HPPT) [1], crystal twinning [2] or surface nucleation of dislocations [3,4]. It is understood that the nucleation of dislocations is more prevalent than HPPT in the presence of free surfaces, for examples in, nanoparticles of silicon [5] while no evidence of crystal twinning during contact loading of silicon has been reported in the literature other than the work of Mylvaganam et al [2].…”
Section: Introductionmentioning
confidence: 99%
“…10 As such, in the absence of direct evidence, the necessity of the Si-II phase during the CAT process is uncertain, and has in fact been challenged by several research groups. 13,14,21 In an effort to directly observe the response of c-Si to indentation, Minor et al 22 carried out indentation tests inside TEM. They found no phase transformation and only dislocationmediated metal-like plastic deformation.…”
Section: Introductionmentioning
confidence: 99%