In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

Wang, Yuecun; Zhang, Wei; Wang, Liyuan; Zhuang, Zhuo; Ma, E.; Ju, Li; Shan, Zhiwei

doi:10.1038/am.2016.92

Cited by 63 publications

(49 citation statements)

References 42 publications

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“…The research advances our understanding of Si behavior, such as elastic-plastic transition and amorphization, which are of great interest to silicon science and technology [35], and could lead to new applications. It is also in line with the recent studies of crystalline-to-amorphous transition in silicon which attracts considerable attention [36,37]. Fig.…”

supporting

confidence: 74%

Origin of a Nanoindentation Pop-in Event in Silicon Crystal

2017

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supporting

confidence: 74%

Origin of a Nanoindentation Pop-in Event in Silicon Crystal

2017

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“…Other routes include ion irradiation [4,5] or mechanical deformation [6] of crystalline silicon. The resultant amorphous structures are all different, and so are their shear rigidity and deformability (e.g., some a-Si are brittle while others can be plastically deformed [6][7][8]). It remains a challenge to define a parameter that can be used to quantitatively link properties.…”

Section: Introductionmentioning

confidence: 99%

“…a-Si can be prepared via a number of processing routes, the most popular being chemical or physical vapor deposition [1][2][3]. Other routes include ion irradiation [4,5] or mechanical deformation [6] of crystalline silicon. The resultant amorphous structures are all different, and so are their shear rigidity and deformability (e.g., some a-Si are brittle while others can be plastically deformed [6][7][8]).…”

Section: Introductionmentioning

confidence: 99%

Correlating the properties of amorphous silicon with its flexibility volume

Fan

Ding

et al. 2017

Phys. Rev. B

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For metallic glasses, "flexibility volume" has recently been introduced as a property-revealing indicator of the structural state the glass is in. This parameter incorporates the atomic volume and the vibrational mean square displacement, to combine both static structure and dynamics information. Flexibility volume was shown to quantitatively correlate with the properties of metallic glasses [J. Ding et al. Nat. Comm. 7, 13733 (2016)]. However, it remains to be examined if this parameter is useful for other types of glasses with bonding characteristics, atomic packing structures as well as properties that are distinctly different 3.2017 Page 2 JHU-LBNL from metallic glasses. In this article, we tackle this issue through systematic molecular dynamics simulations of amorphous silicon (a-Si) models produced with different cooling rates, as a-Si is a prototypical covalently bonded network glass whose structure andproperties cannot be characterized using structural parameters such as free volume used for metallic and polymeric glasses. Specifically, we demonstrate a quantitative prediction of the shear modulus of a-Si from the flexibility for atomic motion. This flexibility volume descriptor, when evaluated on the atomic scale, is shown to also correlate well with local packing, as well as with the propensity for thermal relaxations and shear transformations, providing a metric to map out and explain the structural and mechanical heterogeneity in the amorphous material. This case study of a model of covalently bonded network a-Si, together with our earlier demonstration for metallic glasses, points to the universality of flexibility volume as an indicator of the structure state to link with properties, applicable across amorphous materials with different chemical bonding and atomic packing structures.

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“…A high antibonding contribution at the Fermi level E F indicates that the system has chemical instability. In certain cases, such unfavorable interaction would result in a complete collapse of the crystal lattice [54,55]. The comparison between rocksalt Ge 1 Sb 2 Te 4 and Ge 2 Sb 2 Te 4 is shown in Figure 1b,d.…”

Section: Discussionmentioning

confidence: 99%

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

Wang

Mazzarello

et al. 2017

Materials

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Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal–insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

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In situ TEM study of deformation-induced crystalline-to-amorphous transition in silicon

Cited by 63 publications

References 42 publications

Origin of a Nanoindentation Pop-in Event in Silicon Crystal

Origin of a Nanoindentation Pop-in Event in Silicon Crystal

Correlating the properties of amorphous silicon with its flexibility volume

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

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