Room-temperature, CW operation of lattice-matched long-wavelength VCSELs

Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

“…Although many attractive alternative approaches have also been proposed on InP, e.g., by wafer bonding [6], metamorphic DBRs [7], and Sb-based DBRs [8], results have been inferior to typical GaAs-based VCSELs.…”

Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

“…Monolithically grown DBRs lattice-matched to InP substrates continues to attract interests due to the existing highly efficient InGaAsP and InGaAlAs gain materials with the wavelength window covering from 1.3 to 1.8 m. The Sb-based DBRs with large refractive index contrasts of n ranging from 0.43 to 0.44 have been successfully applied in the VCSEL structures [5,6]. However, these DBRs have drawbacks such as low thermal conductivity and relatively high growth complexity.…”

Design analysis of 1550-nm gaassb-(in)gaasn type-II quantum-well laser active regions

“…I nP-BASED vertical cavity surface emitting lasers (VCSELs) emitting in the 1.55-m wavelength region have been developed based on the technologies of wafer-bonding distributed Bragg reflectors (DBRs) [1], metamorphic DBRs [2], Sb-based DBRs [3], dielectric DBRs [4], and air/semiconductor DBRs [5]. Due to the sophisticated and challenging fabrication processes involved, the lasing performance of InP-based VCSELs are typically inferior to those of GaAs-based (shorter wavelength) VCSELs and InP-based edge-emitting lasers.…”