Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Lu, Tien−Chang; Tsai, Jang-Zern; Kuo, Hao‐Chung; Wang, S. C.

doi:10.1016/j.mseb.2003.10.067

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…1. The DBR structure optimized for 1.55 µm wavelength is made of InP (122.4 nm) and Al0.05Ga0.42In0.53As (109.5 nm), with the refractive indices of 3.17 and 3.54, respectively [30,31].…”

Section: Investigated Structuresmentioning

confidence: 99%

Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths

Mrowiński

Sęk

2019

Physica B: Condensed Matter

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Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter at the third telecommunication window.The modelling is performed for cylindrical and cuboidal mesa structures containing an exciton confined in a single InAs/InP quantum dot. We investigate the emission pattern from such mesas made of InP (which can be exchanged with AlGaInAs lattice-matched to InP) for two cases:monolithic InP material or InP/AlGaInAs distributed Bragg reflector (DBR) underneath the mesa.The calculations are performed as a function of geometrical parameters, i.e. mesa shape and dimensions, and the emitter position. For the case with the DBR, we obtain extraction efficiencies above 25% (for a numerical aperture of 0.4 of a common optical detection system), which also exhibits weak spectral dependence -values above 20% can be obtained in the range of 60 nm around 1550 nm. When the numerical aperture is increased to 0.9, extraction efficiencies about 45% are reachable within the proposed solution. The extraction efficiency is rather weakly sensitive to the in-plane dipole alignment (in the range of 100-200 nm), however, it is more susceptible to even slight changes in its vertical position or to mesa sizes. Eventually, we also comment on the Purcell effect in such weak photonic confinement structures, influence of which on the source brightness is not negligible in some cases.

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“…1. The DBR structure optimized for 1.55 µm wavelength is made of InP (122.4 nm) and Al0.05Ga0.42In0.53As (109.5 nm), with the refractive indices of 3.17 and 3.54, respectively [30,31].…”

Section: Investigated Structuresmentioning

confidence: 99%

Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths

Mrowiński

Sęk

2019

Physica B: Condensed Matter

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“…1. The homemade VCSEL was fabricated with a one-step low-pressure metal-organic chemical vapor deposition technique [23], [24]. The active region was formed by seven pairs of monolithic strain-compensated InGaAs quantum wells (QWs).…”

Section: Methodsmentioning

confidence: 99%

Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission

Lin

Chi

Kuo

et al. 2011

J. Lightwave Technol.

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Abstract-The parametric characterization of a nonreturnto-zero (NRZ) to return-to-zero (RZ) data format converter based on the external optical NRZ injection of a TO-46-can packaged vertical-cavity surface-emitting laser (VCSEL) directly modulated by a 10 GHz electrical pulse is demonstrated. The electrical-pulse modulation induced gain switching of the VCSEL is initiated under external optical NRZ data injection that increases the relaxation oscillation frequency of the homemade VCSEL from 2.2 to 7.4 GHz, thereby enabling its electrical modulation bandwidth up to 10 GHz. The external NRZ injection reduces the lasing threshold and enlarges the modulation depth of the VCSEL so that the converted RZ data pulsewidth can be shortened to 27 ps with a slightly increased peak-to-peak negative frequency chirp of 4.3 GHz (corresponding to a chirp parameter of 122 MHz/ps). The chirp and bit error rate (BER) display strong correlations with the injection power and the biased current of the VCSEL. With external injection, the receiving power required for achieving a BER below 10 9 at 10 Gbit/s is 19 5 dBm, and a power penalty of 16 dB is observed when the dc bias of the electrical-pulse modulated VCSEL is decreased by only 10% from the threshold condition.Index Terms-Chirp parameter, data format convertor, injection-locked, return-to-zero (RZ), vertical-cavity surface-emitting laser (VCSEL).

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Enhancement of light extraction from light emitting diodes

2011

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Comparisons of InP/InGaAlAs and InAlAs/InGaAlAs distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Cited by 5 publications

References 12 publications

Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths

Modelling the enhancement of spectrally broadband extraction efficiency of emission from single InAs/InP quantum dots at telecommunication wavelengths

Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission

Enhancement of light extraction from light emitting diodes

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