2011
DOI: 10.1016/j.physrep.2010.11.001
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Enhancement of light extraction from light emitting diodes

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Cited by 281 publications
(186 citation statements)
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References 692 publications
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“…As we know, the low LEE of LEDs was mainly due to the effects of total internal reflection (TIR) and Fresnel reflection [29], especially the TIR. Under the influence of TIR, the LEE of LEDs can be defined as…”
Section: The Light Extraction Of Planar Ledsmentioning
confidence: 99%
“…As we know, the low LEE of LEDs was mainly due to the effects of total internal reflection (TIR) and Fresnel reflection [29], especially the TIR. Under the influence of TIR, the LEE of LEDs can be defined as…”
Section: The Light Extraction Of Planar Ledsmentioning
confidence: 99%
“…The rapid advances in the hetero-epitaxy of the group-III nitrides (Fernández-Garrido et al (2008); Kemper et al (2011); Suihkonen et al (2008)) have facilitated the production of new devices, including blue and UV LEDs and lasers, high temperature and high power electronics, visible-blind photodetectors and field-emitter structures (Hirayama (2005); Hirayama et al (2010); Tschumak et al (2010); Xie et al (2007); Zhu et al (2007)). There has been recent interest in the Al x In 1−x−y Ga y N quaternary alloys due to potential application in UV LEDs and UV-blue laser diodes (LDs) once they present high brightness, high quantum efficiency, high flexibility, long-lifetime, and low power consumption (Fu et al (2011);Hirayama (2005); Kim et al (2003); Knauer et al (2008); Liu et al (2011);Park et al (2008); Zhmakin (2011);Zhu et al (2007)). The availability of the quaternary alloy offers an extra degree of freedom which allows the independent control of the band gap and lattice constant.…”
Section: Introductionmentioning
confidence: 99%
“…When these microstructures are introduced into the devices, the near-field radiative electromagnetic properties of the devices are changed, which can lead to an improvement in the light emission efficiency. Because of the differences between the refractive indices of the semiconductor layers in the LED chip, the photons produced by radiative recombination in the relatively high index layer suffer from total internal reflection (TIR) [1,2]. The evanescent waves and guided modes that result from the TIR cannot escape from the layers, which results in a reduction in the light emission efficiency.…”
mentioning
confidence: 99%
“…These methods can be divided into two categories [2]: those that change the propagation paths of the radiated photons through the introduction of microstructures, and those that use the microstructures to change the spontaneous emission properties of the active region of the LED chip. A method based on the surface plasmons (SPs) of the microstructures can improve the light emission efficiency attributed to the enhancement of the spontaneous emission.…”
mentioning
confidence: 99%