Room temperature continuous wave operation of electrically-injected Sb-based RC-LED emitting near

Ducanchez, A.; Cerutti, L.; Grech, P.; Genty, F.

doi:10.1016/j.spmi.2008.02.005

“…When cooled down to 5℃ and using 790-nm diode laser for optical pumping, this laser emitted up to 1 W of optical power in a nearly diffraction-limited Gaussian beam demonstrating the high potential of antimonide material for VECSEL fabrication. LED devices based on InGaAsSb/AlGaAsSb multi-quantum well active region sandwiched between two AlAsSb/GaSb n-and pdoped Bragg mirrors structure has realized operation in continuous wave mode under electrical injection at room temperature and exhibited a bright emitting peak near 2.3 m with an external quantum efficiency of 0.16% at 34 A/cm 2 [29]. It shows that antimonides have enormous potential in the development of new high-power, electrical injection and continuous-wave emission mid-infrared optoelectronic devices.…”

Section: Infrared Lasersmentioning

confidence: 99%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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High quantum efficiency N-structure type-II superlattice mid-wavelength infrared detector with resonant cavity enhanced design

Wu

¹

,

Xu

²

,

Li

³

et al. 2017

Superlattices and Microstructures

4

0

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Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹,

Li²,

Zeng³

2010

ENG

View full text Add to dashboard Cite

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

show abstract

Room temperature continuous wave operation of electrically-injected Sb-based RC-LED emitting near

Cited by 3 publications

References 13 publications

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Progress in Antimonide Based III-V Compound Semiconductors and Devices

High quantum efficiency N-structure type-II superlattice mid-wavelength infrared detector with resonant cavity enhanced design

Progress in Antimonide Based III-V Compound Semiconductors and Devices

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