Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding

Ide, Toshihide; Baba, Toshihiko; Tatebayashi, J.; Iwamoto, Satoshi; Nakaoka, Toshihiro; Arakawa, Yasuhiko

doi:10.1364/opex.13.001615

Cited by 43 publications

(33 citation statements)

References 1 publication

(2 reference statements)

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“…The absorbed pump power is estimated to be 11% of the incident pump power on the microdisk, and was determined by first taking the fraction of the pump spot that actually impinges on the disk, and then assuming an absorption coefficient of 10 4 cm −1 for the GaAs layers and quantum well layer and accounting for reflections at the GaAs/air interfaces [17]. This threshold level is approximately two orders of magnitude smaller than those in recent demonstrations of RT, continuous-wave microdisk QD lasers [8,9], although the active regions in those devices contain five stacked layers of QDs while the devices presented here contain only a single layer of QDs. The low lasing threshold of the device presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

Srinivasan¹,

Borselli²,

Painter³

et al. 2006

Opt. Express

160

135

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Abstract:The quality factor (Q), mode volume (V eff ), and roomtemperature lasing threshold of microdisk cavities with embedded quantum dots (QDs) are investigated. Finite element method simulations of standing wave modes within the microdisk reveal that V eff can be as small as 2(λ/n) 3 while maintaining radiation-limited Qs in excess of 10 5 . Microdisks with a 2 µm diameter are fabricated in an AlGaAs material containing a single layer of InAs QDs with peak emission at λ = 1317 nm. For devices with V eff ∼2 (λ/n) 3 , Qs as high as 1.2×10 5 are measured passively in the 1.4 µm band, using an optical fiber taper waveguide. Optical pumping yields laser emission in the 1.3 µm band, with room temperature, continuous-wave thresholds as low as 1 µW of absorbed pump power. Out-coupling of the laser emission is also shown to be significantly enhanced through the use of optical fiber tapers, with a laser differential efficiency as high as ξ ∼ 16% and out-coupling efficiency in excess of 28% measured after accounting for losses in the optical fiber system.

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Section: Resultsmentioning

confidence: 99%

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

Srinivasan¹,

Borselli²,

Painter³

et al. 2006

Opt. Express

160

135

View full text Add to dashboard Cite

show abstract

“…4(d), which is among the best reported T 0 for QD MDLs on III-V substrates. 19,25,27 The temperature-insensitive characteristics demonstrated here can potentially promote their applications in silicon photonics. Here, the larger T 0 of the TE 1,6 mode can be attributed to a better overlap with the gain spectrum at higher temperatures and a superior carrier capture efficiency in larger QDs, 27 which prevent carrier evaporation into barriers.…”

Section: -3mentioning

confidence: 87%

“…6,18 Shrinkage of the disk size opens new venues for future nanophotonic circuits and dense integration. Using QDs as the active medium to effectively counter balance the surface recombination, 19 as well as optimizing the smoothness of the disk sidewall, we are able to overcome the radiative losses and scale the microdisk diameter down to 1.5 lm. With better localized carriers inside the QDs, the internal quantum efficiency of these large surface-to-volume MDLs should be higher than 48%, 20 a theoretical estimate for similar sized MDLs with QWs as gain material.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

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“…The exciting light was focused to a spot size of approximately 4 lm in diameter and approximately 50% of the power reaching the sample surface was absorbed. 22 The pump intensity was varied using polarizers. The emitted light was collected from the top of the microdisks and dispersed through a monochromator with a 500 mm focal length before reaching a liquid-nitrogencooled InGaAs detector array.…”

mentioning

confidence: 99%

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Wan

Liu

et al. 2016

Applied Physics Letters

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Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.

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Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding

Cited by 43 publications

References 1 publication

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

Cavity Q, mode volume, and lasing threshold in small diameter AlGaAs microdisks with embedded quantum dots

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

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