Room-temperature and 50 GHz operation of a functional nanomaterial

Song, Aimin; Omling, P.; Samuelson, Lars; Seifert, Werner; Shorubalko, Ivan; Zirath, Herbert

doi:10.1063/1.1398324

Cited by 90 publications

(77 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…To do this rescaling we note that the magnetic moment is expressed via the orbital momentum as M = eL/(2mc) (in SGS units). Due to the relation (21) it is convenient to choose a unit of orbital momentum induced by a microwave field for one electron the relations…”

Section: To Eqs(21)-(23)mentioning

confidence: 99%

See 1 more Smart Citation

Magnetization of ballistic quantum dots induced by a linear-polarized microwave field

Chepelianskii¹,

Shepelyansky²

2007

Eur. Phys. J. B

View full text Add to dashboard Cite

Abstract. On a basis of extensive analytical and numerical studies we show that a linear-polarized microwave field creates a stationary magnetization in mesoscopic ballistic quantum dots with two-dimensional electron gas being at a thermal equilibrium. The magnetization is proportional to a number of electrons in a dot and to a microwave power. Microwave fields of moderate strength create in a one dot of few micron size a magnetization which is by few orders of magnitude larger than a magnetization produced by persistent currents. The effect is weakly dependent on temperature and can be observed with existing experimental techniques. The parallels between this effect and ratchets in asymmetric nanostructures are also discussed.

show abstract

Section: To Eqs(21)-(23)mentioning

confidence: 99%

“…Such ballistic dots may find possible applications for detection of high frequency microwave radiation at room temperatures. Indeed, the ratchet effect in asymmetric nanostructures, which has certain links with the magnetization discussed here, has been observed at 50GHz at room temperature [21].…”

mentioning

confidence: 99%

Magnetization of ballistic quantum dots induced by a linear-polarized microwave field

Chepelianskii¹,

Shepelyansky²

2007

Eur. Phys. J. B

View full text Add to dashboard Cite

show abstract

“…3, the output is "normal" at room temperature, which has been understood in the framework of the classical ballistic transport. 12 Output reversal starts to be seen at temperatures as high as 204 K. A blow-up of the curve at T = 4.2 K clearly shows an oscillatory output. 19 Also, similar to the case of the ballistic rectifiers, the experiments show that the larger the gaps or the "lattice constants" of the artificial lattice, the lower the temperature at which output reversal starts to be seen.…”

mentioning

confidence: 99%

Quantum behavior in nanoscale ballistic rectifiers and artificial materials

et al. 2003

Self Cite

View full text Add to dashboard Cite

Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the lower and upper contacts of these devices, when an AC voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the DC output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a new physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures.

show abstract

“…It is therefore quite reasonable that for sizable ballistic anomalies to be observed at RT, one may require l 0 to greatly exceed the critical device dimensions. A detailed understanding of just how scattering angles play a role in ballistic anomalies has not been established and would be of interest, particularly in light of experiments 11,49 which propose to utilize such anomalies for RT applications.…”

Section: Discussionmentioning

confidence: 99%

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

et al. 2011

View full text Add to dashboard Cite

InSb/Al x In 1-x Sb heterostructures display intrinsic parallel conduction in the buffer layer at room temperature that limits exploitation of the high-mobility two-dimensional electron gas (2DEG), particularly for nanostructured devices where deep isolation etch processing is impractical. Here, we demonstrate a strategy to reduce the parasitic conduction by the insertion of a pseudomorphic barrier layer of wide-band-gap alloy below the QW. We have studied the high-field magnetotransport in two types of InSb/Al x In 1-x Sb modulation doped quantum well heterostructures with and without the barrier layer in the temperature range 2-290 K and magnetic fields to 7.5 T. The conduction in the doping layer, the 2DEG, and the buffer layer are analyzed using a multi-carrier model that successfully captures the field dependence of the Hall resistance over the experimental field range. Samples with the barrier layer show significantly reduced buffer layer conduction compared to samples without. Our results are expected to be of importance for ambient temperature nano-electronic operation.

show abstract

Room-temperature and 50 GHz operation of a functional nanomaterial

Cited by 90 publications

References 14 publications

Magnetization of ballistic quantum dots induced by a linear-polarized microwave field

Magnetization of ballistic quantum dots induced by a linear-polarized microwave field

Quantum behavior in nanoscale ballistic rectifiers and artificial materials

Suppression of the parasitic buffer layer conductance in InSb/AlxIn1−xSb heterostructures using a wide-band-gap barrier layer

Contact Info

Product

Resources

About