approaches compatible with the conventional semiconductor processes include patterning, etching, and evaporation, which would give rise to the contamination, the structural and chemical changes, and the damages of the sensing chip surface of sensors due to the unavoidable resist residues and/or thermal and radiative effects during fabrication processes. In sharp contrast, shadow mask approach may be adopted as an alternative of sensor fabrication like gas sensors etc. that could protect the sensing chip surface against the contamination, the unwanted structural and chemical changes, and the damages, which would guarantee a clean sensing chip surface with good enough reactivity with the gas molecules, particularly the one with a weak charge transfer nature like NH 3 . NH 3 , a kind of weak electron donor air pollutant, released as an industrial and combustion waste, is a serious threat to the human health and environment. [1] Many diversified gas sensors based on metal oxides, graphene/reduced graphene oxide (RGO), transition metal dichalcogenides and their reasonable hybrids etc., fabricated in chemiresistor or/and field effect transistor (FET) configurations have been reported for NH 3 detection. For instance, a gas sensor based on atomic layers of MoS 2 shows Both simultaneous achievement of high response, low limit of detection, and full recovery at room temperature (RT) for weak reducing gases like NH 3 and facile and batchable fabrication approach are quite challenging for sensors. Herein, ultrathin MoO x layers are hybridized with mono layer graphene with different coverage percentages, into MoO x /GFET (graphene field effect transistor) devices for selective NH 3 sensing fabricated by a facile, cost effective, and contamination-free shadow mask approach instead of conventional lithography processes. A response of −18.10% for 12 ppm NH 3 with full recovery of 356 s, superior repeatability, low detection limit of 310 ppb, and strong selectivity is simultaneously achieved for MoO x /GFET sensors at RT. The superior sensing and recovery performance of MoO x /GFET sensors is predominantly attributed to the effective tuning of Schottky barrier height and the Coulomb interaction between charged polar donor molecules and positively polarized surface enhanced by the positive bias voltage. The energy band diagrams well explain the sensing mechanism for reducing/oxidizing gases. The idea proposed in this study offers a feasible solution for highly selective sensing of different gases by oxides/graphene hybrid FET based gas sensors with superior RT performances fabricated by a facile, contamination-free, batchable, and generalized approach.A. Falak