Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

Park, Yunhwan; Gupta, Dipti; Lee, Changhee; Hong, Yongtaek

doi:10.1016/j.orgel.2012.08.020

Cited by 22 publications

(9 citation statements)

References 19 publications

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“…40c. Moreover, it was found that for the organic FETs with GO as the charge-trapping layers, the one with PMMA as charge tunneling layer exhibits higher 70 mobility and ON/OFF ratio (0.134 cm 2 V -1 s -1 and 10 6 , respectively) than those (0.084 cm 2 V -1 s -1 and 10 5 , respectively) of the device with PVP as charge tunneling layer [286]. Besides, the performance of organic FETs is closely related to the electrode materials and geometry.…”

Section: Field-effect Transistors (Fets)mentioning

confidence: 99%

Physical properties and device applications of graphene oxide

2020

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Graphene oxide (GO), the functionalized graphene with oxygenated groups (mainly epoxy and hydroxyl), has attracted resurgent interests in the past decade owing to its large surface area, superior physical and chemical properties, and easy composition with other materials via surface functional groups. Usually, GO is used as an important raw material for mass production of graphene via reduction. However, under different conditions, the coverage, types, and arrangements of oxygencontaining groups in GO can be varied, which give rise to excellent and controllable physical properties, such as tunable electronic and mechanical properties depending closely on oxidation degree, suppressed thermal conductivity, optical transparency and fluorescence, and nonlinear optical properties. Based on these outstanding properties, many electronic, optical, optoelectronic, and thermoelectric devices with high performance can be achieved on the basis of GO. Here we present a comprehensive review on recent progress of GO, focusing on the atomic structures, fundamental physical properties, and related device applications, including transparent and flexible conductors, field-effect transistors, electrical and optical sensors, fluorescence quenchers, optical limiters and absorbers, surface enhanced Raman scattering detectors, solar cells, light-emitting diodes, and thermal rectifiers.

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Section: Field-effect Transistors (Fets)mentioning

confidence: 99%

Physical properties and device applications of graphene oxide

2020

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“…The first used NVM configuration based on graphene-FETs (GFETs), such as floating gate and charge-trap memories. [91][92][93][94][95][96][97][98][99] RRAMs based on redox-switchable functionalized graphene nanoribbons, [100] stripes of thin (< 10 nm) graphitic material grown by chemical vapor deposition (CVD) [101] and graphene/metal contacts [103] were also proposed.…”

Section: Device Architecturementioning

confidence: 99%

“…Therefore, from Refs. [98,217] , SLG helps to stabilize RS at lower CLs, which reduces the reset current (probably due to the formation of narrower CFs) and the overall power consumption.…”

Section: Lowering Power Consumptionmentioning

confidence: 99%

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Graphene and Related Materials for Resistive Random Access Memories

Hui

Grustan‐Gutierrez

Long

et al. 2017

Adv Elect Materials

196

191

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Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAM). Here, we analyze, classify and evaluate this emerging field, and summarize the performance of the RRAM prototypes using GRMs. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers.Graphene can be used as electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRMs-based RRAMs fit some non-2 volatile memory technological requirements like low operating voltages <1V and switching times <10 ns but others, like retention >10 years, endurance >10 9 cycles and power consumption ~10 pJ/transition still remain a challenge. More technologyoriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization. List of acronymsa-C amorphous-Carbon ALD Atomic Layer Deposition APTES 3-Aminopropyltriethoxysilane BD Dielectric Breakdown BLG Bilayer Graphene BP Black Phosphorous CAFM Conductive Atomic Force Microscopy CBRAM Conductive Bridge Random Access Memory CF Conductive Filament CL Current Limitation CMOS Complementary Metal Oxide Semiconductor CVD Chemical Vapor Deposition CVS Constant Voltage Stresses

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“…In past few decades, many research studies have been conducted on organic-based electronic devices [1,2]. Organic bistable memory devices (OBDs) have attracted tremendous attention as they could be used as flexible nonvolatile memory devices in the near future.…”

Section: Introductionmentioning

confidence: 99%

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

Senthilkumar¹,

Kim

2015

Transactions on Electrical and Electronic Materials

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We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10 5 cycles without degradation) and long retention time (5 × 10 3 s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

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Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

Cited by 22 publications

References 19 publications

Physical properties and device applications of graphene oxide

Physical properties and device applications of graphene oxide

Graphene and Related Materials for Resistive Random Access Memories

Organic Bistable Switching Memory Devices with MeH-PPV and Graphene Oxide Composite

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