Role of the Heavy Metal’s Crystal Phase in Oscillations of Perpendicular Magnetic Anisotropy and the Interfacial Dzyaloshinskii-Moriya Interaction in W/Co−Fe−B/MgO Films

The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

“…For example, in tungsten/magnetic metal lms, the high resistivity of b-W can signicantly increase the effective magnetic anisotropic eld (H an ), thus leading to a decrease in the critical switching current density and a signicant increase in the spin Hall angle. [19][20][21][22][23][24] The same results were also reported for high resistivity b-Ta based multilayered lm structures. [25][26][27][28] Moreover, the insertion of a non-magnetic layer between the heavy metal/magnetic metal layers will also affect the spin-orbit coupling (SOC) of the lm interface, and an appropriate insertion layer can effectively improve the PMA and reduce the spin Hall current density.…”

Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy

“…This direct relationship between the relative variation of DMI and interface anisotropy upon intermixing indicates that they have the same origin, the exchange interaction between magnetic and heavy metal atoms mediated by spin-orbit coupling. [35][36][37] In summary, we have studied the influence of He þ irradiationinduced interfacial intermixing on domain wall dynamics and Dzyaloshinskii-Moriya interaction. We have observed a large increase in domain wall velocity in the creep regime which is consistent with a reduction of pinning at the W/CoFeB interface.…”

Ruderman–Kittel–Kasuya–Yosida-type interfacial Dzyaloshinskii–Moriya interaction in heavy metal/ferromagnet heterostructures

“…During the sputtering process, the intermixing and diffusion of atoms occurred, leading to the formation of a magnetically dead layer (MDL) 22 . The values of effective saturation magnetization ( M s eff ) and the MDL were measured using the samples with t MgO of 0 and 1.2 nm.…”