Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Abstract

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V−1 s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.

<p>Change Of Nano Material Electrical Characteristics For Medical System Applications</p>

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Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses

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Editorial for the Special Issue “Characterization of Nanomaterials: Selected Papers from 6th Dresden Nanoanalysis Symposium”

“…The scope of this Special Issue is to provide an overview of the current status, recent developments and research activities in the field of nanoscale materials characterization, with a particular emphasis on future scenarios. Primarily, analytical techniques for the characterization of thin films and nanostructures [1,2,3,4,5,6,7,8,9] are discussed, including modeling and simulation [9]. Particular techniques for materials characterization are 3D time-of-flight secondary ion mass spectroscopy [1], in situ X-ray diffraction [6] and electron backscatter diffraction [8].…”

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